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Marcelo Antonio Pavanello
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2020 – today
- 2021
- [c7]Michelly de Souza
, Sylvain Barraud, Mikaël Cassé, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello:
Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors. ESSDERC 2021: 223-226
2010 – 2019
- 2019
- [c6]Wladek Grabinski
, Ahmed Abo-Elhadid, Marek Mierzwinski, Laurent Lemaitre, Mike Brinson, Christophe Lallement
, Jean-Michel Sallese, Sadayuki Yoshitomi, Paul Malisse, Henri Oguey, Stefan Cserveny, Marcelo Antonio Pavanello, Christian C. Enz, François Krummenacher, Eric A. Vittoz, Michelly de Souza
, Daniel Tomaszewski, Jolanta Malesinska, Grzegorz Gluszko, Matthias Bucher
, Nikolaos Makris, Aristeidis Nikolaou:
FOSS EKV2.6 Verilog-A Compact MOSFET Model. ESSDERC 2019: 190-193 - [c5]Renan Trevisoli
, Rodrigo Trevisoli Doria, Sylvain Barraud, Marcelo Antonio Pavanello:
Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors. ESSDERC 2019: 194-197 - 2017
- [j11]Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello:
Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. Microelectron. Reliab. 79: 111-118 (2017) - [c4]Renan Trevisoli Doria
, Rodrigo Trevisoli Doria, Michelly de Souza
, Marcelo Antonio Pavanello, Sylvain Barraud:
A new method for junctionless transistors parameters extraction. ESSDERC 2017: 66-69 - 2016
- [j10]Rafael Assalti, Lígia Martins d'Oliveira, Marcelo Antonio Pavanello, Denis Flandre
, Michelly de Souza
:
Experimental and simulation analysis of electrical characteristics of common-source current mirrors implemented with asymmetric self-cascode silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors. IET Circuits Devices Syst. 10(4): 349-355 (2016) - [j9]Magali Estrada, M. Rivas, Ivan Garduño, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello, Israel Mejia
, M. A. Quevedo-Lopez:
Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors. Microelectron. Reliab. 56: 29-33 (2016) - [j8]Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello:
Drain current model for short-channel triple gate junctionless nanowire transistors. Microelectron. Reliab. 63: 1-10 (2016) - [c3]Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot:
Analog performance of strained SOI nanowires down to 10K. ESSDERC 2016: 222-225 - 2013
- [j7]Michelly de Souza
, Bruna Cardoso Paz, Denis Flandre
, Marcelo Antonio Pavanello:
Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs. Microelectron. Reliab. 53(6): 848-855 (2013) - 2012
- [j6]Renan Trevisoli Doria
, João Antonio Martino
, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello:
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. Microelectron. Reliab. 52(3): 519-524 (2012) - 2011
- [j5]Denise C. Lugo Muñoz, Juan Muci, Adelmo Ortiz-Conde
, Francisco J. García-Sánchez
, Michelly de Souza
, Marcelo Antonio Pavanello:
An explicit multi-exponential model for semiconductor junctions with series and shunt resistances. Microelectron. Reliab. 51(12): 2044-2048 (2011)
2000 – 2009
- 2008
- [j4]Rodrigo Trevisoli Doria, Antonio Cerdeira, Jean-Pierre Raskin, Denis Flandre
, Marcelo Antonio Pavanello:
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation. Microelectron. J. 39(12): 1663-1670 (2008) - 2006
- [j3]Salvador Pinillos Gimenez
, Marcelo Antonio Pavanello, João Antonio Martino
, Denis Flandre
:
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS. Microelectron. J. 37(1): 31-37 (2006) - [j2]Marcelo Antonio Pavanello, Paula Ghedini Der Agopian, João Antonio Martino
, Denis Flandre
:
Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications. Microelectron. J. 37(2): 137-144 (2006) - [j1]Milene Galeti, Marcelo Antonio Pavanello, João Antonio Martino
:
Evaluation of graded-channel SOI MOSFET operation at high temperatures. Microelectron. J. 37(7): 601-607 (2006) - 2003
- [c2]Salvador Pinillos Gimenez
, Marcelo Antonio Pavanello, João Antonio Martino
, Stephane Adriaensen, Denis Flandre
:
Design of Operational Transconductance Amplifiers with Improved Gain by Using Graded-Channel SOI nMOSFETs. SBCCI 2003: 26- - 2001
- [c1]Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre:
Analog Circuit Design Using Graded-Channel SOI NMOSFETS. SBCCI 2001: 130-135
Coauthor Index
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