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2010 – 2019
- 2013
[c5]Harold Pilo, Chad A. Adams, Igor Arsovski, Robert M. Houle, Steve Lamphier, Michael M. Lee, Frank Pavlik, Sushma N. Sambatur, Adnan Seferagic, Richard Wu, Mohammad Imran Younus:
A 64Mb SRAM in 22nm SOI technology featuring fine-granularity power gating and low-energy power-supply-partition techniques for 37% leakage reduction. ISSCC 2013: 322-323- 2012
- [j5]Harold Pilo, Igor Arsovski, Kevin Batson, Geordie Braceras, John A. Gabric, Robert M. Houle, Steve Lamphier, Carl Radens, Adnan Seferagic:
A 64 Mb SRAM in 32 nm High-k Metal-Gate SOI Technology With 0.7 V Operation Enabled by Stability, Write-Ability and Read-Ability Enhancements. IEEE J. Solid State Circuits 47(1): 97-106 (2012) - 2011
- [c4]Harold Pilo, Igor Arsovski, Kevin Batson, Geordie Braceras, John A. Gabric, Robert M. Houle, Steve Lamphier, Frank Pavlik, Adnan Seferagic, Liang-Yu Chen, Shang-Bin Ko, Carl Radens:
A 64Mb SRAM in 32nm High-k metal-gate SOI technology with 0.7V operation enabled by stability, write-ability and read-ability enhancements. ISSCC 2011: 254-256
2000 – 2009
- 2009
- [j4]Vinod Ramadurai, Harold Pilo, John Andersen, Geordie Braceras, John A. Gabric, Daniel Geise, Steve Lamphier, Yue Tan:
An 8 Mb SRAM in 45 nm SOI Featuring a Two-Stage Sensing Scheme and Dynamic Power Management. IEEE J. Solid State Circuits 44(1): 155-162 (2009) - 2008
- [c3]Harold Pilo, Vaidyanathan Ramadurai, Geordie Braceras, John A. Gabric, Steve Lamphier, Yue Tan:
A 450ps Access-Time SRAM Macro in 45nm SOI Featuring a Two-Stage Sensing-Scheme and Dynamic Power Management. ISSCC 2008: 378-379 - 2007
- [j3]Harold Pilo, Charlie Barwin, Geordie Braceras, Chris Browning, Steve Lamphier, Fred Towler:
An SRAM Design in 65-nm Technology Node Featuring Read and Write-Assist Circuits to Expand Operating Voltage. IEEE J. Solid State Circuits 42(4): 813-819 (2007) - [c2]Larry Wissel, Harold Pilo, Chris LeBlanc, Xiaopeng Wang, Steve Lamphier, Michael Fragano:
A 550ps Access-Time Compilable SRAM in 65nm CMOS Technology. CICC 2007: 21-24 - 2003
- [j2]Harold Pilo, Darren Anand, John Barth, Steve Burns, Phil Corson, Jim Covino, Steve Lamphier:
A 5.6-ns random cycle 144-Mb DRAM with 1.4 Gb/s/pin and DDR3-SRAM interface. IEEE J. Solid State Circuits 38(11): 1974-1980 (2003) - 2000
- [j1]Harold Pilo, Archie Allen, Jim Covino, Patrick Hansen, Steve Lamphier, Chris Murphy, Terry Traver, Pui Yee:
An 833-MHz 1.5-W 18-Mb CMOS SRAM with 1.67 Gb/s/pin. IEEE J. Solid State Circuits 35(11): 1641-1647 (2000) - [c1]Harold Pilo, Stu Hall, Patrick Hansen, Steve Lamphier, Chris Murphy:
Design-for-test methods for stand-alone SRAMs at 1 Gb/s/pin and beyond. ITC 2000: 436-443
Coauthor Index
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