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ORCIDSachin Yadav 0001
Person information
- affiliation: imec, Leuven, Belgium
Other persons with the same name
- Sachin Yadav — disambiguation page
- Sachin Yadav 0002
![[0000-0003-0048-1118]](https://dblp.org/img/orcid-mark.12x12.png "0000-0003-0048-1118")
— Google DeepMind (and 2 more) - Sachin Yadav 0003 — TU Delft, Delft, The Netherlands
- Sachin Yadav 0004 — Walmart Global Technology, Bangalore, India
- Sachin Yadav 0005 — Institute for Natural Language Processing, University of Stuttgart, Germany
- Sachin Yadav 0006 — Sharda University, Greater Noida, India
- Sachin Yadav 0007 — O.P. Jindal Global University, Sonipat, Haryana, India
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2020 – today
- 2024
[c7]Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert:
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS 2024: 1-9- 2023
- [c6]Rana Y. El Kashlan, Hao Yu, Ahmad Khaled, Sachin Yadav, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais:
A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. ESSDERC 2023: 152-155 - 2022
- [c5]Abhitosh Vais, Sachin Yadav, Yves Mols, Bjorn Vermeersch, Komal Vondkar Kodandarama, Marina Baryshnikova, G. Mannaert, R. Alcotte, Geert Boccardi, Piet Wambacq, Bertrand Parvais, R. Langer, Bernardette Kunert, Nadine Collaert:
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance. ESSDERC 2022: 261-264 - [c4]AliReza Alian, Raúl Rodríguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana Y. El Kashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertrand Parvais:
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. ESSDERC 2022: 384-387 - [c3]Vamsi Putcha, Hao Yu, Jacopo Franco, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert:
Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications. IRPS 2022: 11 - 2021
- [c2]Pieter Cardinael, Sachin Yadav, Ming Zhao, Martin Rack, Dimitri Lederer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin:
Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates. ESSDERC 2021: 303-306 - [c1]Sachin Yadav, Pieter Cardinael, Ming Zhao, Komal Vondkar, Uthayasankaran Peralagu, AliReza Alian, Ahmad Khaled, Sergej Makovejev, Enrique Ekoga, Dimitri Lederer, Jean-Pierre Raskin, Bertrand Parvais, Nadine Collaert:
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. ICICDT 2021: 1-4
Coauthor Index
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