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Raik Hoffmann
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2020 – today
- 2024
- [j1]Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De:
Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility. Adv. Intell. Syst. 6(4) (2024) - [c14]Maximilian Lederer, Franz Müller, Raik Hoffmann, Ricardo Olivo, Yannick Raffel, Shouzhuo Yang, Sourav De, Roman Potjan, Oliver Ostien, Abdelrahman Altawil, Ayse Sünbül, David Lehninger, Thomas Kämpfe, Konrad Seidel:
Enhanced reliability and trapping behavior in ferroelectric FETs under cryogenic conditions. IMW 2024: 1-4 - [c13]Ayse Sünbül, David Lehninger, Raik Hoffmann, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe, Konrad Siedel, Maximilian Lederer, Lukas M. Eng:
Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors. IRPS 2024: 1-5 - 2023
- [c12]Franz Müller, Sourav De, Maximilian Lederer, Raik Hoffmann, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Tarek Ali, Halid Mulaosmanovic, Stefan Dünkel, Johannes Müller, Sven Beyer, Gerald Gerlach:
Multi-Level Operation of Ferroelectric FET Memory Arrays for Compute-In-Memory Applications. IMW 2023: 1-4 - [c11]Konrad Seidel, David Lehninger, Franz Müller, Yannick Raffel, Ayse Sünbül, Ricardo Revello, Raik Hoffmann, Sourav De, Thomas Kämpfe, Maximilian Lederer:
Hafnium oxide-based Ferroelectric Memories: Are we ready for Application? IMW 2023: 1-4 - 2022
- [c10]Yannick Raffel, Sunanda Thunder, Maximilian Lederer, Ricardo Olivo, Raik Hoffmann, Luca Pirro, Sven Beyer, Talha Chohan, Po-Tsang Huang, Sourav De, Thomas Kämpfe, Konrad Seidel, Johannes Heitmann:
Interfacial Layer Engineering to Enhance Noise Immunity of FeFETs for IMC Applications. ICICDT 2022: 8-11 - [c9]Tarek Ali, Ricardo Olivo, S. Kerdilès, David Lehninger, Maximilian Lederer, Sourav De, A.-S. Royet, Ayse Sünbül, A. Prabhu, Kati Kühnel, Malte Czernohorsky, M. Rudolph, Raik Hoffmann, Christelle Charpin-Nicolle, Laurent Grenouillet, Thomas Kämpfe, Konrad Seidel:
Study of Nanosecond Laser Annealing on Silicon Doped Hafnium Oxide Film Crystallization and Capacitor Reliability. IMW 2022: 1-4 - [c8]David Lehninger, Hannes Mähne, Tarek Ali, Raik Hoffmann, Ricardo Olivo, Maximilian Lederer, Konstantin Mertens, Thomas Kämpfe, Kati Biedermann, Matthias Landwehr, Andreas Heinig, Defu Wang, Yukai Shen, Kerstin Bernert, Steffen Thiem, Konrad Seidel:
Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology. IMW 2022: 1-4 - [c7]Yannick Raffel, Ricardo Olivo, Maximilian Lederer, Franz Müller, Raik Hoffmann, Tarek Ali, Konstantin Mertens, Luca Pirro, Maximilian Drescher, Sven Beyer, Thomas Kämpfe, Konrad Seidel, Lukas M. Eng, Johannes Heitmann:
Endurance improvements and defect characterization in ferroelectric FETs through interface fluorination. IMW 2022: 1-4 - [c6]Ayse Sünbül, Tarek Ali, Raik Hoffmann, Ricardo Revello, Yannick Raffel, Pardeep Duhan, David Lehninger, Kati Kühnel, Matthias Rudolph, Sebastian Oehler, Philipp Schramm, Malte Czernohorsky, Konrad Seidel, Thomas Kämpfe, Lukas M. Eng:
Impact of Temperature on Reliability of MFIS HZO-based Ferroelectric Tunnel Junctions. IRPS 2022: 11-1 - [c5]Alison Erlene Viegas, Konstantinos Efstathios Falidas, Tarek Nadi Ismail Ali, Kati Kühnel, Raik Hoffmann, Clemens Mart, Malte Czernohorsky, Johannes Heitmann:
Reliability of Ferroelectric and Antiferroelectric Si: HfO2 materials in 3D capacitors by TDDB studies. IRPS 2022: 47-1 - [c4]Konrad Seidel, David Lehninger, Raik Hoffmann, Tarek Ali, Maximilian Lederer, Ricardo Revello, Konstantin Mertens, Kati Biedermann, Yukai Shen, Defu Wang, Matthias Landwehr, Andreas Heinig, Thomas Kämpfe, Hannes Mähne, Kerstin Bernert, Steffen Thiem:
Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer. VLSI Technology and Circuits 2022: 355-356 - 2020
- [c3]Tarek Ali, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Ricardo Olivo, David Lehninger, Konstantin Mertens, Franz Müller, Maximilian Lederer, Raik Hoffmann, Clemens Mart, Mahsa N. Kalkani, Philipp Steinke, Thomas Kämpfe, Johannes Müller, Jan Van Houdt, Konrad Seidel, Lukas M. Eng:
Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells. IRPS 2020: 1-9 - [c2]Betting Wehring, Raik Hoffmann, Lukas Gerlich, Malte Czernohorsky, Benjamin Uhlig, Robert Seidel, Tobias Barchewitz, Frank Schlaphof, Lutz Meinshausen, Christoph Leyens:
BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c1]Konrad Seidel, Kati Biedermann, Jan Van Houdt, Tarek Ali, Raik Hoffmann, Kati Kühnel, Malte Czernohorsky, Matthias Rudolph, Björn Pätzold, Philipp Steinke, K. Zimmermann:
Gate Stack Optimization Toward Disturb-Free Operation of Ferroelectric HSO based FeFET for NAND Applications. NVMTS 2019: 1-4
Coauthor Index
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