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2020 – today
- 2022
[j7]Issa Alaji
, Etienne Okada, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière:
Temperature compensated power detector towards power consumption optimization in 5G devices. Microelectron. J. 120: 105351 (2022)- 2021
- [j6]Issa Alaji, Walid Aouimeur, Haitham Ghanem, Etienne Okada, Sylvie Lépilliet, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière:
Design of zero bias power detectors towards power consumption optimization in 5G devices. Microelectron. J. 111: 105035 (2021) - 2020
- [i2]Arun Bhaskar, Justine Philippe, Vanessa Avramovic, Flavie Braud, Jean-François Robillard, Cédric Durand, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois:
Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA. CoRR abs/2008.09030 (2020) - [i1]Arun Bhaskar, Justine Philippe, Flavie Braud, Etienne Okada, Vanessa Avramovic, Jean-François Robillard, Cédric Durand, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois:
Large-area femtosecond laser milling of silicon employing trench analysis. CoRR abs/2008.13205 (2020)
2010 – 2019
- 2017
- [c5]Marcelino Seif, Fabien Pascal, Bruno Sagnes, J. Elbeyrouthy, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria:
Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies. ICM 2017: 1-4 - 2014
- [j5]Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria:
Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications. Microelectron. Reliab. 54(9-10): 2171-2175 (2014) - [c4]Marcelino Seif, Fabien Pascal, Bruno Sagnes, Alain Hoffmann, Sébastien Haendler, Pascal Chevalier, Daniel Gloria:
Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistors. ESSDERC 2014: 373-376 - [c3]Pietro M. Ferreira, Cora Donche, Kamel Haddadi, Tuami Lasri, Gilles Dambrine, Christophe Gaquière, Thomas Quemerais, Daniel Gloria:
1-20 Ghz kΩ-range BiCMOS 55 nm reflectometer. NEWCAS 2014: 385-388 - 2013
- [j4]Nejdat Demirel, Yenny Pinto, Christophe Calvez, Diane Titz, Cyril Luxey, Christian Person, Daniel Gloria, Didier Belot, Denis Pache, Eric Kerherve:
Codesign of a PA-Antenna Block in Silicon Technology for 80-GHz Radar Application. IEEE Trans. Circuits Syst. II Express Briefs 60-II(4): 177-181 (2013) - [c2]Florence Sonnerat, Romain Pilard, Frederic Gianesello, Sebastien Jan, François Le Pennec, Christian Person, Cedric Durand, Daniel Gloria:
30 dBm P1dB and 4 dB insertion losses optimized 4G antenna tuner fully integrated in a 130 nm CMOS SOI technology. RWS 2013: 73-75 - 2012
- [j3]Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo:
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. IEEE J. Solid State Circuits 47(5): 1075-1083 (2012) - 2010
- [c1]Amin Arbabian, Bagher Afshar, Jun-Chau Chien, Shinwon Kang, Steven Callender, Ehsan Adabi, Stefano Dal Toso, Romain Pilard, Daniel Gloria, Ali M. Niknejad:
A 90GHz-carrier 30GHz-bandwidth hybrid switching transmitter with integrated antenna. ISSCC 2010: 420-421
2000 – 2009
- 2009
- [j2]Grégory Avenier, Malick Diop, Pascal Chevalier, Germaine Troillard, Nicolas Loubet, Julien Bouvier, Linda Depoyan, Nicolas Derrier, Michel Buczko, Cédric Leyris, Samuel Boret, Sébastien Montusclat, Alain Margain, Sébastien Pruvost, Sean T. Nicolson, Kenneth H. K. Yau, Nathalie Revil, Daniel Gloria, Didier Dutartre, Sorin P. Voinigescu, Alain Chantre:
0.13µm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications. IEEE J. Solid State Circuits 44(9): 2312-2321 (2009) - 2005
- [j1]Pascal Chevalier, Cyril Fellous, Laurent Rubaldo, Franck Pourchon, Sébastien Pruvost, Rudy Beerkens, Fabienne Saguin, Nicolas Zerounian, Benoît Barbalat, Sylvie Lépilliet, Didier Dutartre, Didier Céli, Isabelle Telliez, Daniel Gloria, Frédéric Aniel, François Danneville, Alain Chantre:
230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications. IEEE J. Solid State Circuits 40(10): 2025-2034 (2005)
Coauthor Index
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