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2020 – today
- 2024
[j12]Qingkun Li, Lei Cao, Qingzhu Zhang, Lianlian Li, Xuexiang Zhang, Chuqiao Niu, Guanqiao Sang, Yunjiao Bao, Huaxiang Yin
, Zhenhua Wu:
Source/drain extension asymmetric counter-doping for suppressing channel leakage in stacked nanosheet transistors. Microelectron. J. 151: 106347 (2024)- [c6]Zhaomeng Gao, Tianjiao Xin, Cheng Liu, Yilin Xu, Yiwei Wang, Yunzhe Zheng, Rui Wang, Xiaotian Li, Yonghui Zheng, Kai Du, Diqing Su, Zhaohao Zhang, Huaxiang Yin, Weifeng Zhang, Chao Li, Xiaoling Lin, Haitao Jiang, Sannian Song, Zhitang Song, Yan Cheng, Hangbing Lyu:
Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures. IRPS 2024: 1-5 - 2023
- [j11]Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang:
Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing. Adv. Intell. Syst. 5(11) (2023) - [j10]Zhaohao Zhang, Guoliang Tian, Jiali Huo, Fang Zhang, Qingzhu Zhang, Gaobo Xu, Zhenhua Wu, Yan Cheng, Yan Liu, Huaxiang Yin:
Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications. Sci. China Inf. Sci. 66(10) (2023) - [j9]Peng Zhao, Lei Cao, Fan Zhang, Haoqing Xu, Weizhuo Gan, Qingzhu Zhang, Zhaohao Zhang, Jiaxin Yao, Guoliang Tian, Kun Luo, Zhenhua Wu, Huaxiang Yin:
Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors. Microelectron. J. 141: 105970 (2023) - 2022
- [j8]Qigen Lin, Tianyu Ci, Leibin Wang, Sanjit Kumar Mondal, Huaxiang Yin, Ying Wang:
Transfer Learning for Improving Seismic Building Damage Assessment. Remote. Sens. 14(1): 201 (2022) - [c5]Haoqing Xu, Weizhuo Gan, Lei Cao, Huaxiang Yin, Zhenhua Wu:
Prediction of Key Metrics of Stacked Nanosheet nFETs using Genetic Algorithm-based Neural Networks. ICTA 2022: 3-4 - [c4]S. J. Mao, J. B. Liu, Y. Wang, W. B. Liu, Y. P. Hu, H. W. Cui, R. Zhang, H. C. Liu, Z. X. Wang, N. Zhou, Y. K. Zhang, Hong Yang, Zhenhua Wu, Yongliang Li, J. F. Gao, Anyun Du, Junfeng Li, Jun Luo, Wenwu Wang, Huaxiang Yin:
Investigation on Contacts Thermal Stability for 3D Sequential Integration. IRPS 2022: 37-1 - 2021
- [j7]Jiali Huo, Weixing Huang, Fan Zhang, Shengli Zhang, Weizhuo Gan, Qiang Huo, Yuwei Cai, Qingzhu Zhang, Yongliang Li, Huilong Zhu, Huaxiang Yin, Zhenhua Wu:
Investigation on negative capacitance FinEFT beyond 7 nm node from device to circuit. Microelectron. J. 116: 105196 (2021) - [c3]Hao Chang, Longda Zhou, Hong Yang, Zhigang Ji, Qianqian Liu, Eddy Simoen, Huaxiang Yin, Wenwu Wang:
Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs. IRPS 2021: 1-5 - [c2]Longda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang:
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs. IRPS 2021: 1-7 - 2020
- [j6]Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin:
Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor. IEEE Access 8: 154898-154905 (2020) - [j5]Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye:
Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO2/TiN-capping/TiAl gate stacks. Sci. China Inf. Sci. 63(2): 129403 (2020) - [j4]Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang:
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Sci. China Inf. Sci. 63(12) (2020) - [c1]Longda Zhou, Qingzhu Zhang, Hong Yang, Zhigang Ji, Zhaohao Zhang, Renren Xu, Huaxiang Yin, Wenwu Wang:
Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs. IRPS 2020: 1-6
2010 – 2019
- 2018
- [j3]Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang:
Process variation dependence of total ionizing dose effects in bulk nFinFETs. Microelectron. Reliab. 88-90: 946-951 (2018) - [j2]Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin:
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment. Microelectron. Reliab. 88-90: 969-973 (2018) - 2015
- [j1]Xiaolong Ma, Huaxiang Yin, Peizhen Hong:
Gate-All-Around Silicon Nanowire Transistors with channel-last process on bulk Si substrate. IEICE Electron. Express 12(7): 20150094 (2015)
Coauthor Index
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last updated on 2024-08-23 18:35 CEST by the dblp team
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