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ORCIDPaul K. Hurley
Person information
- affiliation: National University of Ireland, University College Cork, Department of Chemistry and Tyndall, Ireland
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2010 – 2019
- 2018
[c3]D. A. J. Millar, X. Li, U. Peralagu, M. J. Steer, I. M. Pavey, Guilherme Gaspar
, M. Schmidt, Paul K. Hurley, I. G. Thayne:
High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down Approach. DRC 2018: 1-2- 2017
- [c2]Gioele Mirabelli, Farzan Gity, Scott Monaghan, Paul K. Hurley, Ray Duffy:
Impact of impurities, interface traps and contacts on MoS2 MOSFETs: Modelling and experiments. ESSDERC 2017: 288-291 - [c1]Patrick Ponath, Agham B. Posadas, Yuan Ren, Xiaoyu Wu, Keji Lai, Alex Demkov, Michael Schmidt, Ray Duffy, Paul K. Hurley, Jian Wang, Chadwin D. Young, Rama K. Vasudevan, M. Baris Okatan, Stephen Jesse, Sergei V. Kalinin:
Advances of the development of a ferroelectric field-effect transistor on Ge(001). ICICDT 2017: 1-3 - 2013
- [j11]X. Saura, D. Moix, Jordi Suñé, Paul K. Hurley, Enrique Miranda:
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress. Microelectron. Reliab. 53(9-11): 1257-1260 (2013) - 2010
- [j10]Enrique Miranda, Eamon O'Connor, Paul K. Hurley:
Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics. Microelectron. Reliab. 50(9-11): 1294-1297 (2010)
2000 – 2009
- 2009
- [j9]Enrique Miranda, Javier Martín-Martínez, Eamon O'Connor, G. Hughes, P. Casey, Karim Cherkaoui, S. Monaghan, R. Long, D. O'Connell, Paul K. Hurley:
Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. Microelectron. Reliab. 49(9-11): 1052-1055 (2009) - 2007
- [j8]Octavian Buiu, Steve Hall, Olof Engström, B. Raeissi, Max Christian Lemme, Paul K. Hurley, Karim Cherkaoui:
Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation. Microelectron. Reliab. 47(4-5): 678-681 (2007) - [j7]Richard A. Farrell, Karim Cherkaoui, Nikolay Petkov, Heinz Amenitsch, Justin D. Holmes, Paul K. Hurley, Michael A. Morris:
Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. Microelectron. Reliab. 47(4-5): 759-763 (2007) - [j6]Paul K. Hurley, Karim Cherkaoui, S. McDonnell, G. Hughes, A. W. Groenland:
Characterisation and passivation of interface defects in (1 0 0)-Si/SiO2/HfO2/TiN gate stacks. Microelectron. Reliab. 47(8): 1195-1201 (2007) - 2005
- [j5]Paul K. Hurley:
Editorial. Microelectron. Reliab. 45(5-6): 767-769 (2005) - [j4]J. M. Decams, H. Guillon, Carmen Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, Barry J. O'Sullivan, Mircea Modreanu, Paul K. Hurley:
Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD. Microelectron. Reliab. 45(5-6): 929-932 (2005) - [j3]Q. Fang, I. Liaw, Mircea Modreanu, Paul K. Hurley, I. W. Boyd:
Post deposition UV-induced O2 annealing of HfO2 thin films. Microelectron. Reliab. 45(5-6): 957-960 (2005) - [j2]Y. Lu, Octavian Buiu, Steve Hall, Paul K. Hurley:
Optical and electrical characterization of hafnium oxide deposited by MOCVD. Microelectron. Reliab. 45(5-6): 965-968 (2005) - 2001
- [j1]Barry J. O'Sullivan, Paul K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven:
Flat band voltage shift and oxide properties after rapid thermal annealing. Microelectron. Reliab. 41(7): 1053-1056 (2001)
Coauthor Index
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