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ORCIDKai Ni 0004
Person information
- affiliation: Rochester Institute of Technology, Department of Electrical and Microelectronic Engineering, NY, USA
- affiliation: University of Notre Dame, Department of Electrical Engineering, IN, USA
Other persons with the same name
- Kai Ni — disambiguation page
- Kai Ni 0001 — Georgia Institute of Technology, Atlanta, GA, USA
- Kai Ni 0002 — Georgia Institute of Technology, Atlanta, GA, USA
- Kai Ni 0003
![[0000-0002-7467-2921]](https://dblp.org/img/orcid-mark.12x12.png "0000-0002-7467-2921")
— University of Liverpool, Department of Electrical Engineering and Electronics, UK - Kai Ni 0005 — Tsinghua University, Division of Advanced Manufacturing, Graduate School, Shenzhen, China (and 1 more)
- Kai Ni 0007 — Duke University, Durham, NC, USA
- Kai Ni 0008 — China Jiliang University, Hangzhou, Zhejiang, China (and 1 more)
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Journal Articles
- 2024
[j19]Taixin Li, Boran Sun, Hongtao Zhong, Yixin Xu, Vijaykrishnan Narayanan, Liang Shi, Tianyi Wang, Yao Yu, Thomas Kämpfe, Kai Ni, Huazhong Yang, Xueqing Li:
ProtFe: Low-Cost Secure Power Side-Channel Protection for General and Custom FeFET-Based Memories. ACM Trans. Design Autom. Electr. Syst. 29(1): 3:1-3:18 (2024)- [j18]Jianfeng Wang, Zhonghao Chen, Jiahao Zhang, Yixin Xu, Tongguang Yu, Ziheng Zheng, Enze Ye, Sumitha George, Huazhong Yang, Yongpan Liu, Kai Ni, Vijaykrishnan Narayanan, Xueqing Li:
A Module-Level Configuration Methodology for Programmable Camouflaged Logic. ACM Trans. Design Autom. Electr. Syst. 29(2): 39:1-39:31 (2024) - [j17]Chao Li, Chen Sun, Jianyi Yang, Kai Ni, Xiao Gong, Cheng Zhuo, Xunzhao Yin:
Multibit Content Addressable Memory Design and Optimization Based on 3-D nand-Compatible IGZO Flash. IEEE Trans. Very Large Scale Integr. Syst. 32(8): 1380-1388 (2024) - 2023
- [j16]Xunzhao Yin, Franz Müller, Qingrong Huang, Chao Li, Mohsen Imani, Zeyu Yang, Jiahao Cai, Maximilian Lederer, Ricardo Olivo, Nellie Laleni, Shan Deng, Zijian Zhao, Zhiguo Shi, Yiyu Shi, Cheng Zhuo, Thomas Kämpfe, Kai Ni:
An Ultracompact Single-Ferroelectric Field-Effect Transistor Binary and Multibit Associative Search Engine. Adv. Intell. Syst. 5(7) (2023) - [j15]Xunzhao Yin, Yu Qian, Mohsen Imani, Kai Ni, Chao Li, Grace Li Zhang, Bing Li, Ulf Schlichtmann, Cheng Zhuo:
Ferroelectric Ternary Content Addressable Memories for Energy-Efficient Associative Search. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(4): 1099-1112 (2023) - [j14]Cheng Zhuo, Zeyu Yang, Kai Ni, Mohsen Imani, Yuxuan Luo, Shaodi Wang, Deming Zhang, Xunzhao Yin:
Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(5): 1450-1462 (2023) - [j13]Qingrong Huang, Zeyu Yang, Kai Ni, Mohsen Imani, Cheng Zhuo, Xunzhao Yin:
FeFET-Based In-Memory Hyperdimensional Encoding Design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(11): 3829-3839 (2023) - [j12]Wenjun Tang, Mingyen Lee, Juejian Wu, Yixin Xu, Yao Yu, Yongpan Liu, Kai Ni, Yu Wang, Huazhong Yang, Vijaykrishnan Narayanan, Xueqing Li:
FeFET-Based Logic-in-Memory Supporting SA-Free Write-Back and Fully Dynamic Access With Reduced Bitline Charging Activity and Recycled Bitline Charge. IEEE Trans. Circuits Syst. I Regul. Pap. 70(6): 2398-2411 (2023) - [j11]Wenjun Tang, Jialong Liu, Chen Sun, Zijie Zheng, Yongpan Liu, Huazhong Yang, Chen Jiang, Kai Ni, Xiao Gong, Xueqing Li:
Low-Power and Scalable BEOL-Compatible IGZO TFT eDRAM-Based Charge-Domain Computing. IEEE Trans. Circuits Syst. I Regul. Pap. 70(12): 5166-5179 (2023) - 2022
- [j10]Rongmei Chen, Lin Chen, Jie Liang, Yuanqing Cheng, Souhir Elloumi, Jaehyun Lee, Kangwei Xu, Vihar P. Georgiev, Kai Ni, Peter Debacker, Asen Asenov, Aida Todri-Sanial:
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation - Part I: CNFET Transistor Optimization. IEEE Trans. Very Large Scale Integr. Syst. 30(4): 432-439 (2022) - [j9]Rongmei Chen, Lin Chen, Jie Liang, Yuanqing Cheng, Souhir Elloumi, Jaehyun Lee, Kangwei Xu, Vihar P. Georgiev, Kai Ni, Peter Debacker, Asen Asenov, Aida Todri-Sanial:
Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation - Part II: CNT Interconnect Optimization. IEEE Trans. Very Large Scale Integr. Syst. 30(4): 440-448 (2022) - [j8]Eslam Elmitwalli, Kai Ni, Selçuk Köse:
Machine Learning Attack Resistant Area-Efficient Reconfigurable Ising-PUF. IEEE Trans. Very Large Scale Integr. Syst. 30(4): 526-538 (2022) - [j7]Xiaoyang Ma, Hongtao Zhong, Nuo Xiu, Yiming Chen, Guodong Yin, Vijaykrishnan Narayanan, Yongpan Liu, Kai Ni, Huazhong Yang, Xueqing Li:
CapCAM: A Multilevel Capacitive Content Addressable Memory for High-Accuracy and High-Scalability Search and Compute Applications. IEEE Trans. Very Large Scale Integr. Syst. 30(11): 1770-1782 (2022) - 2021
- [j6]Eslam Elmitwalli, Kai Ni, Selçuk Köse:
A PVT Tolerant True Random Number Generator Based on Oscillator Phase Under Sub-Harmonic Injection Locking. IEEE Access 9: 141626-141634 (2021) - 2020
- [j5]Xiaoming Chen, Kai Ni, Michael T. Niemier, Dayane Reis, Xiaoyu Sun, Panni Wang, Suman Datta, Xiaobo Sharon Hu, Xunzhao Yin, Matthew Jerry, Shimeng Yu, Ann Franchesca Laguna:
The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures. IEEE Des. Test 37(1): 79-99 (2020) - [j4]Ali Keshavarzi, Kai Ni, Wilbert van den Hoek, Suman Datta, Arijit Raychowdhury:
FerroElectronics for Edge Intelligence. IEEE Micro 40(6): 33-48 (2020) - 2019
- [j3]Xueqing Li, Juejian Wu, Kai Ni, Sumitha George, Kaisheng Ma, John Sampson, Sumeet Kumar Gupta, Yongpan Liu, Huazhong Yang, Suman Datta, Vijaykrishnan Narayanan:
Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs. IEEE Des. Test 36(3): 39-45 (2019) - [j2]Xiaoming Chen, Kai Ni, Michael T. Niemier, Yinhe Han, Suman Datta, Xiaobo Sharon Hu:
Power and Area Efficient FPGA Building Blocks Based on Ferroelectric FETs. IEEE Trans. Circuits Syst. I Regul. Pap. 66-I(5): 1780-1793 (2019) - [j1]Xunzhao Yin, Kai Ni, Dayane Alfenas Reis, Suman Datta, Michael T. Niemier, Xiaobo Sharon Hu:
An Ultra-Dense 2FeFET TCAM Design Based on a Multi-Domain FeFET Model. IEEE Trans. Circuits Syst. II Express Briefs 66-II(9): 1577-1581 (2019)
Conference and Workshop Papers
- 2024
- [c46]Arnob Saha, Bibhas Manna, Sen Lu, Zhouhang Jiang, Kai Ni, Abhronil Sengupta:
Device Feasibility Analysis of Multi-level FeFETs for Neuromorphic Computing. AICAS 2024: 327-331 - [c45]Qingrong Huang, Hamza Errahmouni Barkam, Zeyu Yang, Jianyi Yang, Thomas Kämpfe, Kai Ni, Grace Li Zhang, Bing Li, Ulf Schlichtmann, Mohsen Imani, Cheng Zhuo, Xunzhao Yin:
A FeFET-based Time-Domain Associative Memory for Multi-bit Similarity Computation. DATE 2024: 1-6 - [c44]Taixin Li, Hongtao Zhong, Juejian Wu, Thomas Kämpfe, Kai Ni, Vijaykrishnan Narayanan, Huazhong Yang, Xueqing Li:
CafeHD: A Charge-Domain FeFET-Based Compute-in-Memory Hyperdimensional Encoder with Hypervector Merging. DATE 2024: 1-6 - [c43]Haotian Xu, Jianyi Yang, Cheng Zhuo, Thomas Kämpfe, Kai Ni, Xunzhao Yin:
Reconfigurable Frequency Multipliers Based on Complementary Ferroelectric Transistors. DATE 2024: 1-6 - [c42]Yifei Zhou, Xuchu Huang, Jianyi Yang, Kai Ni, Hussam Amrouch, Cheng Zhuo, Xunzhao Yin:
Low Power and Temperature- Resilient Compute-In-Memory Based on Subthreshold-FeFET. DATE 2024: 1-6 - [c41]Sven Beyer, Dominik Kleimaier, Stefan Dünkel, Halid Mulaosmanovic, Steven Soss, Johannes Müller, Zhouhang Jiang, Kai Ni, Thomas Mikolajick, Haidi Zhou:
Charge trapping challenges of CMOS embedded complementary FeFETs. IMW 2024: 1-4 - 2023
- [c40]Shamiul Alam, Jack Hutchins, Md. Shafayat Hossain, Kai Ni, Vijaykrishnan Narayanan, Ahmedullah Aziz:
Cryogenic In-Memory Matrix-Vector Multiplication using Ferroelectric Superconducting Quantum Interference Device (FE-SQUID). DAC 2023: 1-6 - [c39]Kai Ni, Yi Xiao, Shan Deng, Vijaykrishnan Narayanan:
Computational Associative Memory Powered by Ferroelectric Memory. DRC 2023: 1-2 - [c38]Sukhrob Abdulazhanov, Quang Huy Le, Dang Khoa Huynh, Maximilian Lederer, Yannick Raffel, Kai Ni, Xunzhao Yin, Thomas Kämpfe, Gerald Gerlach:
Reconfigurable ferroelectric hafnium oxide FeFET fabricated in 28 nm CMOS technology for mmWave applications. ESSDERC 2023: 113-116 - [c37]Shengxi Shou, Che-Kai Liu, Sanggeon Yun, Zishen Wan, Kai Ni, Mohsen Imani, X. Sharon Hu, Jianyi Yang, Cheng Zhuo, Xunzhao Yin:
SEE-MCAM: Scalable Multi-Bit FeFET Content Addressable Memories for Energy Efficient Associative Search. ICCAD 2023: 1-9 - [c36]Om Prakash, Kai Ni, Hussam Amrouch:
Monolithic 3D Integrated BEOL Dual-Port Ferroelectric FET to Break the Tradeoff Between the Memory Window and the Ferroelectric Thickness. IRPS 2023: 1-4 - [c35]Simon Thomann, Albi Mema, Kai Ni, Hussam Amrouch:
Reliable FeFET-based Neuromorphic Computing through Joint Modeling of Cycle-to-Cycle Variability, Device-to-Device Variability, and Domain Stochasticity. IRPS 2023: 1-5 - [c34]Yi Xiao, Yixin Xu, Shan Deng, Zijian Zhao, Sumitha George, Kai Ni, Vijaykrishnan Narayanan:
A Compact Ferroelectric 2T-(n+1)C Cell to Implement AND-OR Logic in Memory. ISVLSI 2023: 1-6 - [c33]A. N. M. Nafiul Islam, Kai Ni, Abhronil Sengupta:
Cross-Layer Optimizations for Ferroelectric Neuromorphic Computing. MWSCAS 2023: 108-112 - [c32]Zijie Zheng, Leming Jiao, Zuopu Zhou, Yuxuan Wang, Long Liu, Kaizhen Han, Chen Sun, Qiwen Kong, Dong Zhang, Xiaolin Wang, Kai Ni, Xiao Gong:
First Demonstration of Work Function-Engineered BEOL-Compatible IGZO Non-Volatile MFMIS AFeFETs and Their Co-Integration with Volatile-AFeFETs. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c31]Prathyush Poduval, Yang Ni, Yeseong Kim, Kai Ni, Raghavan Kumar, Rosario Cammarota, Mohsen Imani:
Adaptive neural recovery for highly robust brain-like representation. DAC 2022: 367-372 - [c30]Jiahao Cai, Mohsen Imani, Kai Ni, Grace Li Zhang, Bing Li, Ulf Schlichtmann, Cheng Zhuo, Xunzhao Yin:
Energy efficient data search design and optimization based on a compact ferroelectric FET content addressable memory. DAC 2022: 751-756 - [c29]Liu Liu, Mohammad Mehdi Sharifi, Ramin Rajaei, Arman Kazemi, Kai Ni, Xunzhao Yin, Michael T. Niemier, Xiaobo Sharon Hu:
Eva-CAM: A Circuit/Architecture-Level Evaluation Tool for General Content Addressable Memories. DATE 2022: 1173-1176 - [c28]Shamiul Alam, Md. Mazharul Islam, Md. Shafayat Hossain, Kai Ni, Vijaykrishnan Narayanan, Ahmedullah Aziz:
Cryogenic Memory Array based on Ferroelectric SQUID and Heater Cryotron. DRC 2022: 1-2 - [c27]Simon Thomann, Kai Ni, Hussam Amrouch:
Joint Modeling of Multi-Domain Ferroelectric and Distributed Channel towards Unveiling the Asymmetric Abrupt DC Current Jump in Ferroelectric FET. ESSDERC 2022: 336-339 - [c26]Che-Kai Liu, Haobang Chen, Mohsen Imani, Kai Ni, Arman Kazemi, Ann Franchesca Laguna, Michael T. Niemier, Xiaobo Sharon Hu, Liang Zhao, Cheng Zhuo, Xunzhao Yin:
COSIME: FeFET Based Associative Memory for In-Memory Cosine Similarity Search. ICCAD 2022: 137:1-137:9 - [c25]Kai Ni, Om Prakash, Simon Thomann, Zijian Zhao, Shan Deng, Hussam Amrouch:
Suppressing Channel Percolation in Ferroelectric FET for Reliable Neuromorphic Applications. IRPS 2022: 1-8 - [c24]Om Prakash, Kai Ni, Hussam Amrouch:
Ferroelectric FET Threshold Voltage Optimization for Reliable In-Memory Computing. IRPS 2022: 1-10 - [c23]Navjeet Bagga, Kai Ni, Nitanshu Chauhan, Om Prakash, X. Sharon Hu, Hussam Amrouch:
Cleaved-Gate Ferroelectric FET for Reliable Multi-Level Cell Storage. IRPS 2022: 5-1 - [c22]Nitanshu Chauhan, Chirag Garg, Kai Ni, Amit Kumar Behera, Sarita Yadav, Shashank Banchhor, Navjeet Bagga, Avirup Dasgupta, Arnab Datta, Sudeb Dasgupta, Anand Bulusu:
Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on Multidomain MFIM Capacitor and Negative Capacitance FDSOI. IRPS 2022: 23-1 - [c21]Sanjay Das, Arun Govindankutty, Shan Deng, Kai Ni, Sumitha George:
Adaptable Multi-level Voltage to Binary Converter Using Ferroelectric FETs. ISVLSI 2022: 116-121 - [c20]Zijie Zheng, Chen Sun, Leming Jiao, Dong Zhang, Zuopu Zhou, Xiaolin Wang, Gan Liu, Qiwen Kong, Yue Chen, Kai Ni, Xiao Gong:
Boosting the Memory Window of the BEOL-Compatible MFMIS Ferroelectric/ Anti-Ferroelectric FETs by Charge Injection. VLSI Technology and Circuits 2022: 389-390 - [c19]Zhouhang Jiang, Yi Xiao, Swetaki Chatterjee, Halid Mulaosmanovic, Stefan Dünkel, Steven Soss, Sven Beyer, Rajiv V. Joshi, Yogesh Singh Chauhan, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni:
Asymmetric Double-Gate Ferroelectric FET to Decouple the Tradeoff Between Thickness Scaling and Memory Window. VLSI Technology and Circuits 2022: 395-396 - 2021
- [c18]Yu Qian, Zhenhao Fan, Haoran Wang, Chao Li, Mohsen Imani, Kai Ni, Grace Li Zhang, Bing Li, Ulf Schlichtmann, Cheng Zhuo, Xunzhao Yin:
Energy-Aware Designs of Ferroelectric Ternary Content Addressable Memory. DATE 2021: 1090-1095 - [c17]Xinrui Guo, Xiaoyang Ma, Franz Müller, Ricardo Olivo, Juejian Wu, Kai Ni, Thomas Kämpfe, Yongpan Liu, Huazhong Yang, Xueqing Li:
Exploiting FeFET Switching Stochasticity for Low-Power Reconfigurable Physical Unclonable Function. ESSCIRC 2021: 119-122 - [c16]Xinrui Guo, Xiaoyang Ma, Franz Müller, Ricardo Olivo, Juejian Wu, Kai Ni, Thomas Kämpfe, Yongpan Liu, Huazhong Yang, Xueqing Li:
Exploiting FeFET Switching Stochasticity for Low-Power Reconfigurable Physical Unclonable Function. ESSDERC 2021: 119-122 - [c15]Shan Deng, Zijian Zhao, Santosh Kurinec, Kai Ni, Yi Xiao, Tongguang Yu, Vijaykrishnan Narayanan:
Overview of Ferroelectric Memory Devices and Reliability Aware Design Optimization. ACM Great Lakes Symposium on VLSI 2021: 473-478 - [c14]Hussam Amrouch, Di Gao, Xiaobo Sharon Hu, Arman Kazemi, Ann Franchesca Laguna, Kai Ni, Michael T. Niemier, Mohammad Mehdi Sharifi, Simon Thomann, Xunzhao Yin, Cheng Zhuo:
ICCAD Tutorial Session Paper Ferroelectric FET Technology and Applications: From Devices to Systems. ICCAD 2021: 1-8 - [c13]Mohammad Mehdi Sharifi, Lillian Pentecost, Ramin Rajaei, Arman Kazemi, Qiuwen Lou, Gu-Yeon Wei, David M. Brooks, Kai Ni, X. Sharon Hu, Michael T. Niemier, Marco Donato:
Application-driven Design Exploration for Dense Ferroelectric Embedded Non-volatile Memories. ISLPED 2021: 1-6 - 2020
- [c12]Kai Ni, Sourav Dutta, Suman Datta:
Ferroelectrics: From Memory to Computing. ASP-DAC 2020: 401-406 - [c11]Kai Ni, Aniket Gupta, Om Prakash, Simon Thomann, Xiaobo Sharon Hu, Hussam Amrouch:
Impact of Extrinsic Variation Sources on the Device-to-Device Variation in Ferroelectric FET. IRPS 2020: 1-5 - [c10]Aniket Gupta, Kai Ni, Om Prakash, Xiaobo Sharon Hu, Hussam Amrouch:
Temperature Dependence and Temperature-Aware Sensing in Ferroelectric FET. IRPS 2020: 1-5 - [c9]Arman Kazemi, Ramin Rajaei, Kai Ni, Suman Datta, Michael T. Niemier, Xiaobo Sharon Hu:
A Hybrid FeMFET-CMOS Analog Synapse Circuit for Neural Network Training and Inference. ISCAS 2020: 1-5 - [c8]Sumin Jot, Abdullah M. Zyarah, Santosh Kurinec, Kai Ni, Fatima Tuz Zohora, Dhireesha Kudithipudi:
FeFET-Based Neuromorphic Architecture with On-Device Feedback Alignment Training. ISQED 2020: 317-322 - 2019
- [c7]Juejian Wu, Hongtao Zhong, Kai Ni, Yongpan Liu, Huazhong Yang, Xueqing Li:
A 3T/Cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs. DAC 2019: 82 - [c6]Wriddhi Chakraborty, Kai Ni, Sourav Dutta, Benjamin Grisafe, Jeffrey Smith, Suman Datta:
Cryogenic Response of HKMG MOSFETs for Quantum Computing Systems. DRC 2019: 115-116 - [c5]Jorge Gomez, Sourav Dutta, Kai Ni, Benjamin Grisafe, Jeffrey Smith, Asif Khan, Suman Datta:
Significance of Multi and Few Domain Ferroelectric Switching Dynamics for Steep-Slope Non-Hysteretic Ferroelectric Field Effect Transistor. DRC 2019: 247-248 - 2018
- [c4]Ahmedullah Aziz, Evelyn T. Breyer, An Chen, Xiaoming Chen, Suman Datta, Sumeet Kumar Gupta, Michael Hoffmann, Xiaobo Sharon Hu, Adrian M. Ionescu, Matthew Jerry, Thomas Mikolajick, Halid Mulaosmanovic, Kai Ni, Michael T. Niemier, Ian O'Connor, Atanu Saha, Stefan Slesazeck, Sandeep Krishna Thirumala, Xunzhao Yin:
Computing with ferroelectric FETs: Devices, models, systems, and applications. DATE 2018: 1289-1298 - [c3]Matthew Jerry, Jeffrey A. Smith, Kai Ni, Atanu Saha, Sumeet Kumar Gupta, Suman Datta:
Insinhts on the DC Characterization of Ferroelectric Field-Effect-Transistors. DRC 2018: 1-2 - [c2]Insik Yoon, Muya Chang, Kai Ni, Matthew Jerry, Samantak Gangopadhyay, Gus Henry Smith, Tomer Hamam, Vijayakrishan Narayanan, Justin Romberg, Shih-Lien Lu, Suman Datta, Arijit Raychowdhury:
A FeFET Based Processing-In-Memory Architecture for Solving Distributed Least-Square Optimizations. DRC 2018: 1-2 - 2017
- [c1]Jeffrey A. Smith, Kai Ni, Ram Krishna Ghosh, Jeff Xu, Mustafa Badaroglu, P. R. Chidi Chidambaram, Suman Datta:
Investigation of electrically gate-all-around hexagonal nanowire FET (HexFET) architecture for 5 nm node logic and SRAM applications. ESSDERC 2017: 188-191
Informal and Other Publications
- 2024
- [i24]Zijian Zhao, Sola Woo, Khandker Akif Aabrar, Sharadindu Gopal Kirtania, Zhouhang Jiang, Shan Deng, Yi Xiao, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Steven Soss, Sven Beyer, Rajiv V. Joshi, Scott Meninger, Mohamed Mohamed, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Suman Datta, Shimeng Yu, Kai Ni:
Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate. CoRR abs/2403.04981 (2024) - [i23]Ruiyang Qin, Zheyu Yan, Dewen Zeng, Zhenge Jia, Dancheng Liu, Jianbo Liu, Zhi Zheng, Ningyuan Cao, Kai Ni, Jinjun Xiong, Yiyu Shi:
Robust Implementation of Retrieval-Augmented Generation on Edge-based Computing-in-Memory Architectures. CoRR abs/2405.04700 (2024) - 2023
- [i22]Zijian Zhao, Shan Deng, Swetaki Chatterjee, Zhouhang Jiang, Muhammad Shaffatul Islam, Yi Xiao, Yixin Xu, Scott Meninger, Mohamed Mohamed, Rajiv V. Joshi, Yogesh Singh Chauhan, Halid Mulaosmanovic, Stefan Dünkel, Dominik Kleimaier, Sven Beyer, Hussam Amrouch, Vijaykrishnan Narayanan, Kai Ni:
Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET. CoRR abs/2305.01484 (2023) - [i21]Yixin Xu, Yi Xiao, Zijian Zhao, Franz Müller, Alptekin Vardar, Xiao Gong, Sumitha George, Thomas Kämpfe, Vijaykrishnan Narayanan, Kai Ni:
Embedding Security into Ferroelectric FET Array via In-Situ Memory Operation. CoRR abs/2306.01863 (2023) - [i20]Xunzhao Yin, Yu Qian, Alptekin Vardar, Marcel Gunther, Franz Müller, Nellie Laleni, Zijian Zhao, Zhouhang Jiang, Zhiguo Shi, Yiyu Shi, Xiao Gong, Cheng Zhuo, Thomas Kämpfe, Kai Ni:
A Ferroelectric Compute-in-Memory Annealer for Combinatorial Optimization Problems. CoRR abs/2309.13853 (2023) - [i19]Shengxi Shou, Che-Kai Liu, Sanggeon Yun, Zishen Wan, Kai Ni, Mohsen Imani, X. Sharon Hu, Jianyi Yang, Cheng Zhuo, Xunzhao Yin:
SEE-MCAM: Scalable Multi-bit FeFET Content Addressable Memories for Energy Efficient Associative Search. CoRR abs/2310.04940 (2023) - [i18]Bibhas Manna, Arnob Saha, Zhouhang Jiang, Kai Ni, Abhronil Sengupta:
Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning. CoRR abs/2312.15444 (2023) - [i17]Yifei Zhou, Xuchu Huang, Jianyi Yang, Kai Ni, Hussam Amrouch, Cheng Zhuo, Xunzhao Yin:
Low Power and Temperature-Resilient Compute-In-Memory Based on Subthreshold-FeFET. CoRR abs/2312.17442 (2023) - [i16]Haotian Xu, Jianyi Yang, Cheng Zhuo, Thomas Kämpfe, Kai Ni, Xunzhao Yin:
Reconfigurable Frequency Multipliers Based on Complementary Ferroelectric Transistors. CoRR abs/2312.17444 (2023) - 2022
- [i15]Xunzhao Yin, Franz Müller, Qingrong Huang, Chao Li, Mohsen Imani, Zeyu Yang, Jiahao Cai, Maximilian Lederer, Ricardo Olivo, Nellie Laleni, Shan Deng, Zijian Zhao, Cheng Zhuo, Thomas Kämpfe, Kai Ni:
An Ultra-Compact Single FeFET Binary and Multi-Bit Associative Search Engine. CoRR abs/2203.07948 (2022) - [i14]Antik Mallick, Zijian Zhao, Mohammad Khairul Bashar, Shamiul Alam, Md. Mazharul Islam, Yi Xiao, Yixin Xu, Ahmedullah Aziz, Vijaykrishnan Narayanan, Kai Ni, Nikhil Shukla:
CMOS-Compatible Ising Machines built using Bistable Latches Coupled through Ferroelectric Transistor Arrays. CoRR abs/2205.14729 (2022) - [i13]Che-Kai Liu, Haobang Chen, Mohsen Imani, Kai Ni, Arman Kazemi, Ann Franchesca Laguna, Michael T. Niemier, Xiaobo Sharon Hu, Liang Zhao, Cheng Zhuo, Xunzhao Yin:
COSIME: FeFET based Associative Memory for In-Memory Cosine Similarity Search. CoRR abs/2207.12188 (2022) - [i12]Xinrui Guo, Xiaoyang Ma, Franz Müller, Kai Ni, Thomas Kämpfe, Yongpan Liu, Vijaykrishnan Narayanan, Xueqing Li:
Ferroelectric FET-based strong physical unclonable function: a low-power, high-reliable and reconfigurable solution for Internet-of-Things security. CoRR abs/2208.14678 (2022) - [i11]Xunzhao Yin, Qingrong Huang, Franz Müller, Shan Deng, Alptekin Vardar, Sourav De, Zhouhang Jiang, Mohsen Imani, Cheng Zhuo, Thomas Kämpfe, Kai Ni:
A Homogeneous Processing Fabric for Matrix-Vector Multiplication and Associative Search Using Ferroelectric Time-Domain Compute-in-Memory. CoRR abs/2209.11971 (2022) - [i10]A. N. M. Nafiul Islam, Arnob Saha, Zhouhang Jiang, Kai Ni, Abhronil Sengupta:
Hybrid Stochastic Synapses Enabled by Scaled Ferroelectric Field-effect Transistors. CoRR abs/2209.13685 (2022) - [i9]Yixin Xu, Zijian Zhao, Yi Xiao, Tongguang Yu, Halid Mulaosmanovic, Dominik Kleimaier, Stefan Dünkel, Sven Beyer, Xiao Gong, Rajiv V. Joshi, X. Sharon Hu, Shixian Wen, Amanda Sofie Rios, Kiran Lekkala, Laurent Itti, Eric Homan, Sumitha George, Vijaykrishnan Narayanan, Kai Ni:
Ferroelectric FET based Context-Switching FPGA Enabling Dynamic Reconfiguration for Adaptive Deep Learning Machines. CoRR abs/2212.00089 (2022) - [i8]Hongtao Zhong, Zijie Zheng, Kai Ni, Xiao Gong, Huazhong Yang, Xueqing Li:
Eliminating Leakage in Volatile Memory with Anti-Ferroelectric Transistors. CoRR abs/2212.04973 (2022) - [i7]Shamiul Alam, Md. Shafayat Hossain, Kai Ni, Vijaykrishnan Narayanan, Ahmedullah Aziz:
Voltage-controlled Cryogenic Boolean Logic Family Based on Ferroelectric SQUID. CoRR abs/2212.08202 (2022) - 2021
- [i6]Mohammad Mehdi Sharifi, Lillian Pentecost, Ramin Rajaei, Arman Kazemi, Qiuwen Lou, Gu-Yeon Wei, David Brooks, Kai Ni, X. Sharon Hu, Michael T. Niemier, Marco Donato:
Application-driven Design Exploration for Dense Ferroelectric Embedded Non-volatile Memories. CoRR abs/2106.11757 (2021) - [i5]Arnob Saha, A. N. M. Nafiul Islam, Zijian Zhao, Shan Deng, Kai Ni, Abhronil Sengupta:
Intrinsic synaptic plasticity of ferroelectric field effect transistors for online learning. CoRR abs/2107.13088 (2021) - [i4]Xunzhao Yin, Franz Müller, Ann Franchesca Laguna, Chao Li, Wenwen Ye, Qingrong Huang, Qinming Zhang, Zhiguo Shi, Maximilian Lederer, Nellie Laleni, Shan Deng, Zijian Zhao, Michael T. Niemier, Xiaobo Sharon Hu, Cheng Zhuo, Thomas Kämpfe, Kai Ni:
Deep Random Forest with Ferroelectric Analog Content Addressable Memory. CoRR abs/2110.02495 (2021) - [i3]Tongguang Yu, Yixin Xu, Shan Deng, Zijian Zhao, Nicholas Jao, You Sung Kim, Stefan Dünkel, Sven Beyer, Kai Ni, Sumitha George, Vijaykrishnan Narayanan:
Hardware Functional Obfuscation With Ferroelectric Active Interconnects. CoRR abs/2110.03855 (2021) - 2020
- [i2]Arman Kazemi, Ramin Rajaei, Kai Ni, Suman Datta, Michael T. Niemier, Xiaobo Sharon Hu:
A Hybrid FeMFET-CMOS Analog Synapse Circuit for Neural Network Training and Inference. CoRR abs/2004.00703 (2020) - [i1]Xunzhao Yin, Chao Li, Qingrong Huang, Li Zhang, Michael T. Niemier, Xiaobo Sharon Hu, Cheng Zhuo, Kai Ni:
FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric. CoRR abs/2004.01866 (2020)
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