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Marc M. Heyns
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2020 – today
- 2024
- [i2]Md Nur K. Alam, Sergiu Clima, Ben Kaczer, Philippe Roussel, Brecht Truijen, Lars-Åke Ragnarsson, N. Horiguchi, Marc M. Heyns, Jan Van Houdt:
Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics. CoRR abs/2404.13138 (2024) - 2022
- [c5]Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt:
Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits 2022: 340-342
2010 – 2019
- 2019
- [i1]Giacomo Talmelli, Thibaut Devolder, Nick Träger, Johannes Förster, Sebastian Wintz, Markus Weigand, Hermann Stoll, Marc M. Heyns, Gisela Schütz, Iuliana P. Radu, Joachim Gräfe, Florin Ciubotaru, Christoph Adelmann:
Reconfigurable nanoscale spin wave majority gate with frequency-division multiplexing. CoRR abs/1908.02546 (2019) - 2017
- [c4]Tarun Agarwal, Bart Soree
, Iuliana P. Radu
, Praveen Raghavan, Gianluca Fiori, Marc M. Heyns, Wim Dehaene:
Material selection and device design guidelines for two-dimensional materials based TFETs. ESSDERC 2017: 54-57 - 2016
- [c3]Tarun Agarwal, Iuliana P. Radu
, Praveen Raghavan, Gianluca Fiori
, Aaron Thean, Marc M. Heyns, Wim Dehaene:
Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspective. ESSCIRC 2016: 55-58 - 2015
- [c2]Abhitosh Vais
, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken
, Kristin De Meyer:
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS 2015: 5 - 2012
- [c1]Jacopo Franco
, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
:
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT 2012: 1-4
2000 – 2009
- 2007
- [j4]M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken
, Marc M. Heyns:
Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling. Microelectron. Reliab. 47(6): 880-889 (2007) - 2005
- [j3]G. S. Lujan, Wim Magnus, L.-Å. Ragnarsson, Stefan Kubicek, Stefan De Gendt, Marc M. Heyns, Kristin De Meyer:
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance. Microelectron. Reliab. 45(5-6): 794-797 (2005) - 2001
- [j2]Chao Zhao, Gert Roebben, Hugo Bender, Edward Young, S. Haukka, Michel Houssa
, Mohamed Naili, Stefan De Gendt, Marc M. Heyns, Omer Van der Biest:
In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction. Microelectron. Reliab. 41(7): 995-998 (2001)
1990 – 1999
- 1999
- [j1]Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken
, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers
, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke:
Cost-effective cleaning and high-quality thin gate oxides. IBM J. Res. Dev. 43(3): 339-350 (1999)
Coauthor Index
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last updated on 2024-05-31 01:42 CEST by the dblp team
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