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ORCIDHervé Blanck
Person information
- affiliation: United Monolithic Semiconductors, Ulm, Germany
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2020 – today
- 2022
[c2]Francesca Chiocchetta, Carlo De Santi
, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. IRPS 2022: 11- [c1]Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz:
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. IRPS 2022: 51-1
2010 – 2019
- 2018
- [j15]Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni:
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectron. Reliab. 88-90: 397-401 (2018) - 2017
- [j14]Andreas Graff, Michél Simon-Najasek, Frank Altmann, Ján Kuzmík, Dagmar Gregusová, S. Hascik, Helmut Jung, T. Baur, Jan Grünenpütt, Hervé Blanck:
High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. Microelectron. Reliab. 76-77: 338-343 (2017) - 2016
- [j13]Mikael Broas, Andreas Graff, Michél Simon-Najasek, David Poppitz, Frank Altmann, Helmut Jung, Hervé Blanck:
Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. Microelectron. Reliab. 64: 541-546 (2016) - 2015
- [j12]Tommaso Brazzini, Michael A. Casbon, Huarui Sun, Michael J. Uren, Jonathan Lees, Paul J. Tasker, Helmut Jung, Hervé Blanck, Martin Kuball:
Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. Microelectron. Reliab. 55(12): 2493-2498 (2015) - 2014
- [j11]Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. 54(9-10): 2213-2216 (2014) - [j10]Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. Microelectron. Reliab. 54(9-10): 2237-2241 (2014) - 2013
- [j9]P. J. van der Wel, T. Rödle, Benoit Lambert, Hervé Blanck, Maximilian Dammann:
Qualification of 50 V GaN on SiC technology for RF power amplifiers. Microelectron. Reliab. 53(9-11): 1439-1443 (2013) - [j8]Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat:
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53(9-11): 1450-1455 (2013) - 2012
- [j7]Richard Lossy, Hervé Blanck, Joachim Würfl:
Reliability studies on GaN HEMTs with sputtered Iridium gate module. Microelectron. Reliab. 52(9-10): 2144-2148 (2012) - [j6]Benoit Lambert, Jim Thorpe, Reza Behtash, Bernd Schauwecker, Franck Bourgeois, Helmut Jung, Joëlle Bataille, Patrick Mezenge, Cyril Gourdon, Catherine Ollivier, Didier Floriot, Hervé Blanck:
Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification. Microelectron. Reliab. 52(9-10): 2200-2204 (2012) - [j5]Mustapha Faqir, T. Batten, T. Mrotzek, S. Knippscheer, M. Massiot, M. Buchta, Hervé Blanck, S. Rochette, Olivier Vendier, Martin Kuball:
Improved thermal management for GaN power electronics: Silver diamond composite packages. Microelectron. Reliab. 52(12): 3022-3025 (2012) - 2010
- [j4]Benoit Lambert, G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, Hervé Blanck, C. Moreau:
Reliability of high voltage/high power L/S-band Hbt technology. Microelectron. Reliab. 50(9-11): 1543-1547 (2010)
2000 – 2009
- 2008
- [j3]Helmut Jung, Hervé Blanck, Wolfgang Bösch, Jim Mayock:
GaAs Industry in Europe - Technologies, Trends and New Developments. IEICE Trans. Electron. 91-C(7): 1076-1083 (2008) - 2002
- [j2]R. Petersen, Ward De Ceuninck, Jan D'Haen, Marc D'Olieslaeger, Luc De Schepper, Olivier Vendier, Hervé Blanck, Dominique Pons:
Exploring the limits of Arrhenius-based life testing with heterojunction bipolar transistor technology. Microelectron. Reliab. 42(9-11): 1359-1363 (2002) - 2001
- [j1]R. Petersen, Ward De Ceuninck, Luc De Schepper, Olivier Vendier, Hervé Blanck, Dominique Pons:
Determination of the thermal resistance and current exponent of heterojunction bipolar transistors for reliability evaluation. Microelectron. Reliab. 41(9-10): 1591-1596 (2001)
Coauthor Index
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