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David Trémouilles
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2010 – 2019
- 2018
- [j20]D. Hachem, David Trémouilles
, Frederic Morancho, Gaëtan Toulon:
A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance. Microelectron. Reliab. 88-90: 406-410 (2018) - 2017
- [j19]F. Boige, Frédéric Richardeau
, David Trémouilles
, Stéphane Lefebvre, G. Guibaud:
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectron. Reliab. 76-77: 500-506 (2017) - [j18]Mouna Mahane, David Trémouilles
, Marise Bafleur, Benjamin Thon, Marianne Diatta, Lionel Jaouen:
New triggering-speed-characterization method for diode-triggered SCR using TLP. Microelectron. Reliab. 76-77: 692-697 (2017) - 2015
- [j17]Houssam Arbess
, Marise Bafleur, David Trémouilles
, Moustafa Zerarka:
Optimization of a MOS-IGBT-SCR ESD protection component in smart power SOI technology. Microelectron. Reliab. 55(9-10): 1476-1480 (2015) - [j16]Tanguy Phulpin, David Trémouilles
, Karine Isoird
, Dominique Tournier, Philippe Godignon
, Patrick Austin:
Failure analysis of ESD-stressed SiC MESFET. Microelectron. Reliab. 55(9-10): 1542-1548 (2015) - 2014
- [j15]Tanguy Phulpin, David Trémouilles
, Karine Isoird
, Dominique Tournier, Philippe Godignon
, Patrick Austin:
Analysis of an ESD failure mechanism on a SiC MESFET. Microelectron. Reliab. 54(9-10): 2217-2221 (2014) - 2013
- [j14]Nicolas Monnereau, Fabrice Caignet, David Trémouilles
, Nicolas Nolhier, Marise Bafleur:
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation. Microelectron. Reliab. 53(2): 221-228 (2013) - 2012
- [j13]Jinyu Jason Ruan, Nicolas Monnereau, David Trémouilles
, Nicolas Mauran, Fabio Coccetti, Nicolas Nolhier, Robert Plana
:
An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices. IEEE Trans. Instrum. Meas. 61(2): 456-461 (2012)
2000 – 2009
- 2009
- [j12]Marianne Diatta, Emilien Bouyssou, David Trémouilles
, P. Martinez, F. Roqueta, O. Ory, Marise Bafleur:
Failure mechanisms of discrete protection device subjected to repetitive electrostatic discharges (ESD). Microelectron. Reliab. 49(9-11): 1103-1106 (2009) - [j11]Jinyu Jason Ruan, Nicolas Nolhier, George J. Papaioannou
, David Trémouilles
, Vincent Puyal, C. Villeneuve
, T. Idda, Fabio Coccetti, Robert Plana
:
Accelerated lifetime test of RF-MEMS switches under ESD stress. Microelectron. Reliab. 49(9-11): 1256-1259 (2009) - [j10]Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles
, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken
:
A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. Microelectron. Reliab. 49(12): 1440-1446 (2009) - 2007
- [j9]David Trémouilles
, Steven Thijs, Philippe Roussel, M. I. Natarajan, Vesselin K. Vassilev, Guido Groeseneken
:
Transient voltage overshoot in TLP testing - Real or artifact? Microelectron. Reliab. 47(7): 1016-1024 (2007) - 2005
- [j8]Nicolas Guitard, Fabien Essely, David Trémouilles
, Marise Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis:
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. Microelectron. Reliab. 45(9-11): 1415-1420 (2005) - [c1]Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles
, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken
:
RF ESD protection strategies - the design and performance trade-off challenges. CICC 2005: 489-496 - 2004
- [j7]David Trémouilles
, Marise Bafleur, Géraldine Bertrand, Nicolas Nolhier, Nicolas Mauran, Lionel Lescouzères:
Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency. IEEE J. Solid State Circuits 39(10): 1778-1782 (2004) - [j6]Nicolas Guitard, David Trémouilles
, Marise Bafleur, Laurent Escotte, Laurent Bary, Philippe Perdu, Gérard Sarrabayrouse, Nicolas Nolhier, Roberto Reyna-Rojas:
Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications. Microelectron. Reliab. 44(9-11): 1781-1786 (2004) - 2003
- [j5]David Trémouilles
, Géraldine Bertrand, Marise Bafleur, Felix Beaudoin, Philippe Perdu, Nicolas Guitard, Lionel Lescouzères:
TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology. Microelectron. Reliab. 43(1): 71-79 (2003) - [j4]Thomas Beauchêne, Dean Lewis, Felix Beaudoin, Vincent Pouget, Romain Desplats, Pascal Fouillat, Philippe Perdu, Marise Bafleur, David Trémouilles
:
Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization. Microelectron. Reliab. 43(3): 439-444 (2003) - [j3]Thomas Beauchêne, David Trémouilles
, Dean Lewis, Philippe Perdu, Pascal Fouillat:
Characterization of ESD induced defects using Photovoltaic Laser Stimulation (PLS). Microelectron. Reliab. 43(9-11): 1577-1582 (2003) - 2001
- [j2]Géraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, Quang Nguyen, Nicolas Mauran, David Trémouilles
, Philippe Perdu:
Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology. IEEE J. Solid State Circuits 36(9): 1373-1381 (2001) - [j1]Romain Desplats, Felix Beaudoin, Philippe Perdu, Patrick Poirier, David Trémouilles
, Marise Bafleur, Dean Lewis:
Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation. Microelectron. Reliab. 41(9-10): 1539-1544 (2001)
Coauthor Index
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