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Volkan Kursun
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2020 – today
- 2022
- [c73]Anil Kumar Gundu, Volkan Kursun:
Impact of Sheet Width and Silicon Height in 3D Stacked Nanosheet GAA Transistor Technology. ISCAS 2022: 2547-2550 - 2021
- [j42]Anil Kumar Gundu, Volkan Kursun
:
Novel low leakage and energy efficient dual-pullup/dual-pulldown repeater. Integr. 78: 110-117 (2021) - [c72]Anil Kumar Gundu, Volkan Kursun:
Optimization of 3D Stacked Nanosheets in 5nm Gate-all-around Transistor Technology. SoCC 2021: 25-28 - 2020
- [j41]Yanan Sun
, Weifeng He
, Zhigang Mao, Hailong Jiao
, Volkan Kursun
:
Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density. IEEE Trans. Circuits Syst. I Regul. Pap. 67-I(7): 2431-2441 (2020)
2010 – 2019
- 2019
- [j40]Massimo Alioto, Magdy S. Abadir, Tughrul Arslan, Chirn Chye Boon, Andreas Burg
, Chip-Hong Chang
, Meng-Fan Chang, Yao-Wen Chang, Poki Chen, Pasquale Corsonello, Paolo Crovetti
, Shiro Dosho, Rolf Drechsler
, Ibrahim Abe M. Elfadel
, Ruonan Han, Masanori Hashimoto
, Chun-Huat Heng, Deukhyoun Heo, Tsung-Yi Ho
, Houman Homayoun, Yuh-Shyan Hwang, Ajay Joshi, Rajiv V. Joshi, Tanay Karnik, Chulwoo Kim, Tony Tae-Hyoung Kim, Jaydeep Kulkarni, Volkan Kursun
, Yoonmyung Lee, Hai Helen Li, Huawei Li, Prabhat Mishra
, Baker Mohammad
, Mehran Mozaffari Kermani
, Makoto Nagata
, Koji Nii, Partha Pratim Pande, Bipul C. Paul, Vasilis F. Pavlidis, José Pineda de Gyvez, Ioannis Savidis, Patrick Schaumont
, Fabio Sebastiano, Anirban Sengupta, Mingoo Seok, Mircea R. Stan
, Mark M. Tehranipoor, Aida Todri-Sanial
, Marian Verhelst
, Valerio Vignoli, Xiaoqing Wen, Jiang Xu, Wei Zhang, Zhengya Zhang
, Jun Zhou, Mark Zwolinski
, Stacey Weber:
Editorial TVLSI Positioning - Continuing and Accelerating an Upward Trajectory. IEEE Trans. Very Large Scale Integr. Syst. 27(2): 253-280 (2019) - [j39]Anil Kumar Gundu
, Volkan Kursun
:
Low Leakage Clock Tree With Dual-Threshold- Voltage Split Input-Output Repeaters. IEEE Trans. Very Large Scale Integr. Syst. 27(7): 1537-1547 (2019) - [c71]Jiachen Jiang, Yanan Sun, Weifeng He, Zhigang Mao, Volkan Kursun
:
Carbon-Based Three-Dimensional SRAM Cell with Minimum Inter-Layer Area Skew Considering Process imperfections. ASICON 2019: 1-4 - [c70]Yanan Sun, Weifeng He, Zhigang Mao, Hailong Jiao, Volkan Kursun
:
Statistical Modeling and Design of a 16nm 9T SRAM Cell Considering Post-Synthesis Removal of Metallic Carbon-Nanotubes. ICEIC 2019: 1-2 - [c69]Anil Kumar Gundu, Volkan Kursun
:
Energy Efficient Clock Distribution with Low-Leakage Multi-Vt Buffers. PATMOS 2019: 113-118 - 2017
- [j38]Yanan Sun, Weifeng He, Zhigang Mao, Volkan Kursun
:
Variable strength keeper for high-speed and low-leakage carbon nanotube domino logic. Microelectron. J. 62: 12-20 (2017) - [c68]Yanan Sun, Weifeng He, Zhigang Mao, Hailong Jiao, Volkan Kursun
:
Metallic-carbon-nanotube-removal tolerant SRAM cell with 9 transistors. ASICON 2017: 908-911 - 2016
- [j37]Hailong Jiao, Yongmin Qiu, Volkan Kursun
:
Variability-aware 7T SRAM circuit with low leakage high data stability SLEEP mode. Integr. 53: 68-79 (2016) - [j36]Shairfe Muhammad Salahuddin, Volkan Kursun
:
Write Assist SRAM Cell with Asymmetrical Bitline Access Transistors for Enhanced Data Stability and Write Ability. J. Circuits Syst. Comput. 25(1): 1640009:1-1640009:19 (2016) - [j35]Hailong Jiao, Yongmin Qiu, Volkan Kursun
:
Low power and robust memory circuits with asymmetrical ground gating. Microelectron. J. 48: 109-119 (2016) - [c67]Hailong Jiao, Yongmin Qiu, Volkan Kursun
:
Variations-tolerant 9T SRAM circuit with robust and low leakage SLEEP mode. IOLTS 2016: 39-42 - 2015
- [j34]Yanan Sun, Hailong Jiao, Volkan Kursun
:
A Novel Robust and Low-Leakage SRAM Cell With Nine Carbon Nanotube Transistors. IEEE Trans. Very Large Scale Integr. Syst. 23(9): 1729-1739 (2015) - [c66]Yanan Sun, Volkan Kursun
:
Carbon-based sleep switch dynamic logic circuits with variable strength keeper for lower-leakage currents and higher-speed. ISCAS 2015: 2720-2723 - [c65]Hong Zhu, Volkan Kursun
:
2-Phase high-frequency clock distribution with SPLIT-IO dual-Vt repeaters for suppressed leakage currents. ISCAS 2015: 2932-2935 - 2014
- [j33]Hailong Jiao, Volkan Kursun
:
Mode transition timing and energy overhead analysis in noise-aware MTCMOS circuits. Microelectron. J. 45(8): 1125-1131 (2014) - [j32]Yanan Sun, Volkan Kursun
:
Carbon Nanotubes Blowing New Life Into NP Dynamic CMOS Circuits. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(2): 420-428 (2014) - [j31]Hong Zhu, Volkan Kursun
:
A Comprehensive Comparison of Data Stability Enhancement Techniques With Novel Nanoscale SRAM Cells Under Parameter Fluctuations. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(5): 1473-1484 (2014) - [j30]Hong Zhu, Volkan Kursun
:
Novel Low-Leakage and High-Speed Triple-Threshold-Voltage Buffers With Skewed Inputs and Outputs. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(7): 2013-2021 (2014) - [c64]Yanan Sun, Hailong Jiao, Volkan Kursun
:
Low-leakage 9-CN-MOSFET SRAM cell with enhanced read and write voltage margins. ICM 2014: 164-167 - [c63]Hong Zhu, Volkan Kursun
:
Triple-threshold-voltage 9-transistor SRAM cell for data stability and energy-efficiency at ultra-low power supply voltages. ICM 2014: 176-179 - [c62]Hong Zhu, Volkan Kursun
:
A comprehensive comparison of superior triple-threshold-voltage 7-transistor, 8-transistor, and 9-transistor SRAM cells. ISCAS 2014: 2185-2188 - [c61]Shairfe Muhammad Salahuddin, Volkan Kursun
:
High-speed and low-leakage FinFET SRAM cell with enhanced read and write voltage margins. ISIC 2014: 312-315 - 2013
- [j29]Hailong Jiao, Volkan Kursun
:
Reactivation Noise Suppression With Sleep Signal Slew Rate Modulation in MTCMOS Circuits. IEEE Trans. Very Large Scale Integr. Syst. 21(3): 533-545 (2013) - [c60]Shairfe Muhammad Salahuddin, Volkan Kursun
:
Underlap engineered eight-transistor SRAM cell for stronger data stability enhanced write ability and suppressed leakage power consumption. ICECS 2013: 25-28 - [c59]Yanan Sun, Volkan Kursun
:
Low-power and compact NP dynamic CMOS adder with 16nm carbon nanotube transistors. ISCAS 2013: 2119-2122 - [c58]Shairfe Muhammad Salahuddin, Hailong Jiao, Volkan Kursun
:
Low-leakage hybrid FinFET SRAM cell with asymmetrical gate overlap / underlap bitline access transistors for enhanced read data stability. ISCAS 2013: 2331-2334 - [c57]Hong Zhu, Volkan Kursun
:
Novel dual-threshold-voltage energy-efficient buffers for driving large extrinsic load capacitance. ISCAS 2013: 3000-3003 - [c56]Shairfe Muhammad Salahuddin, Hailong Jiao, Volkan Kursun
:
A novel 6T SRAM cell with asymmetrically gate underlap engineered FinFETs for enhanced read data stability and write ability. ISQED 2013: 353-358 - [c55]Hong Zhu, Volkan Kursun
:
Impact of process parameter and supply voltage fluctuations on multi-threshold-voltage seven-transistor static memory cells. ISQED 2013: 448-453 - [c54]Hailong Jiao, Volkan Kursun
:
Ground gated 8T SRAM cells with enhanced read and hold data stability. ISVLSI 2013: 52-57 - [c53]Khawar Sarfraz, Volkan Kursun
:
Characterization of a low leakage current and high-speed 7T SRAM circuit with wide voltage margins. ISVLSI 2013: 64-69 - [c52]Hailong Jiao, Volkan Kursun
:
Characterization of mode transition timing overhead for net energy savings in low-noise MTCMOS circuits. VLSI-SoC 2013: 150-155 - 2012
- [j28]Hailong Jiao, Volkan Kursun
:
Threshold Voltage Tuning for Faster Activation With Lower Noise in Tri-Mode MTCMOS Circuits. IEEE Trans. Very Large Scale Integr. Syst. 20(4): 741-745 (2012) - [c51]Hailong Jiao, Volkan Kursun
:
Full-custom design of low leakage data preserving ground gated 6T SRAM cells to facilitate single-ended write operations. ISCAS 2012: 484-487 - [c50]Yanan Sun, Volkan Kursun
:
NP dynamic CMOS resurrection with carbon nanotube field effect transistors. ISOCC 2012: 13-16 - [c49]Hailong Jiao, Volkan Kursun
:
Multi-phase sleep signal modulation for mode transition noise mitigation in MTCMOS circuits. ISOCC 2012: 466-469 - 2011
- [j27]Hailong Jiao, Volkan Kursun
:
Noise-Aware Data Preserving Sequential MTCMOS Circuits with Dynamic Forward Body Bias. J. Circuits Syst. Comput. 20(1): 125-145 (2011) - [j26]Sherif A. Tawfik, Volkan Kursun
:
Multi-Threshold Voltage FinFET Sequential Circuits. IEEE Trans. Very Large Scale Integr. Syst. 19(1): 151-156 (2011) - [j25]Hailong Jiao, Volkan Kursun
:
Ground Bouncing Noise Suppression Techniques for Data Preserving Sequential MTCMOS Circuits. IEEE Trans. Very Large Scale Integr. Syst. 19(5): 763-773 (2011) - [c48]Yanan Sun, Volkan Kursun
:
Leakage current and bottom gate voltage considerations in developing maximum performance 16nm N-channel carbon nanotube transistors. ISCAS 2011: 2513-2516 - [c47]Hong Zhu, Volkan Kursun
:
Symmetrical triple-threshold-voltage nine-transistor SRAM circuit with superior noise immunity and overall electrical quality. ISOCC 2011: 333-336 - [c46]Hailong Jiao, Volkan Kursun
:
Sleep signal slew rate modulation for mode transition noise suppression in ground gated integrated circuits. SoCC 2011: 365-370 - [c45]Yanan Sun, Volkan Kursun
:
Uniform carbon nanotube diameter and nanoarray pitch for VLSI of 16nm P-channel MOSFETs. VLSI-SoC 2011: 226-231 - 2010
- [j24]Hailong Jiao, Volkan Kursun
:
Low-Leakage and Compact Registers with Easy-Sleep Mode. J. Low Power Electron. 6(2): 263-279 (2010) - [j23]Hailong Jiao, Volkan Kursun
:
Ground-Bouncing-Noise-Aware Combinational MTCMOS Circuits. IEEE Trans. Circuits Syst. I Regul. Pap. 57-I(8): 2053-2065 (2010) - [j22]Sherif A. Tawfik, Volkan Kursun
:
Dual Supply Voltages and Dual Clock Frequencies for Lower Clock Power and Suppressed Temperature-Gradient-Induced Clock Skew. IEEE Trans. Very Large Scale Integr. Syst. 18(3): 347-355 (2010) - [c44]Hailong Jiao, Volkan Kursun
:
Smooth awakenings: Reactivation noise suppressed low-leakage and robust MTCMOS flip-flops. ISCAS 2010: 3845-3848 - [c43]Hailong Jiao, Volkan Kursun
:
Tri-mode Operation for Noise Reduction and Data Preservation in Low-Leakage Multi-Threshold CMOS Circuits. VLSI-SoC (Selected Papers) 2010: 258-290 - [c42]Hailong Jiao, Volkan Kursun
:
Reactivation noise suppression with threshold voltage tuning in sequential MTCMOS circuits. VLSI-SoC 2010: 347-351
2000 – 2009
- 2009
- [j21]Sherif A. Tawfik, Volkan Kursun
:
Robust FinFET Memory Circuits with P-Type Data Access Transistors for Higher Integration Density and Reduced Leakage Power. J. Low Power Electron. 5(4): 497-508 (2009) - [j20]Ranjith Kumar, Volkan Kursun
:
Temperature-adaptive voltage scaling for enhanced energy efficiency in subthreshold memory arrays. Microelectron. J. 40(6): 1013-1025 (2009) - [j19]Sherif A. Tawfik, Volkan Kursun
:
FinFET domino logic with independent gate keepers. Microelectron. J. 40(11): 1531-1540 (2009) - [j18]Sherif A. Tawfik, Volkan Kursun
:
Low Power and High Speed Multi Threshold Voltage Interface Circuits. IEEE Trans. Very Large Scale Integr. Syst. 17(5): 638-645 (2009) - 2008
- [j17]Ranjith Kumar, Zhiyu Liu, Volkan Kursun
:
Technique for Accurate Power and Energy Measurement with the Computer-Aided Design Tools. J. Circuits Syst. Comput. 17(3): 399-421 (2008) - [j16]Ranjith Kumar, Volkan Kursun
:
Temperature-Adaptive Energy Reduction Techniques for Nano-CMOS Circuits Displaying Reversed temperature Dependence. J. Circuits Syst. Comput. 17(3): 423-438 (2008) - [j15]Sherif A. Tawfik, Volkan Kursun
:
Clock Distribution Networks with Gradual Signal Transition Time Relaxation for Reduced Power Consumption. J. Circuits Syst. Comput. 17(6): 1173-1191 (2008) - [j14]Ranjith Kumar, Volkan Kursun
:
Temperature-adaptive voltage tuning for enhanced energy efficiency in ultra-low-voltage circuits. Microelectron. J. 39(12): 1714-1727 (2008) - [j13]Zhiyu Liu, Volkan Kursun
:
Characterization of a Novel Nine-Transistor SRAM Cell. IEEE Trans. Very Large Scale Integr. Syst. 16(4): 488-492 (2008) - [c41]Sherif A. Tawfik, Volkan Kursun
:
Multi-Vth FinFET sequential circuits with independent-gate bias and work-function engineering for reduced power consumption. APCCAS 2008: 348-351 - [c40]Sherif A. Tawfik, Volkan Kursun
:
Asymmetric dual-gate multi-fin keeper bias options and optimization for low power and robust FinFET domino logic. APCCAS 2008: 1720-1723 - [c39]Sherif A. Tawfik, Volkan Kursun
:
Work-function engineering for reduced power and higher integration density: An alternative to sizing for stability in FinFET memory circuits. ISCAS 2008: 788-791 - [c38]Sherif A. Tawfik, Volkan Kursun
:
Low power and robust 7T dual-Vt SRAM circuit. ISCAS 2008: 1452-1455 - [c37]Sherif A. Tawfik, Volkan Kursun
:
Dynamic wordline voltage swing for low leakage and stable static memory banks. ISCAS 2008: 1894-1897 - [c36]Zhiyu Liu, Sherif A. Tawfik, Volkan Kursun
:
Statistical Data Stability and Leakage Evaluation of FinFET SRAM Cells with Dynamic Threshold Voltage Tuning under Process Parameter Fluctuations. ISQED 2008: 305-310 - [c35]Sherif A. Tawfik, Volkan Kursun
:
Characterization of New Static Independent-Gate-Biased FinFET Latches and Flip-Flops under Process Variations. ISQED 2008: 311-316 - [c34]Sherif A. Tawfik, Volkan Kursun
:
Compact FinFET Memory Circuits with P-Type Data Access Transistors for Low Leakage and Robust Operation. ISQED 2008: 855-860 - 2007
- [j12]Ranjith Kumar, Volkan Kursun
:
Voltage optimization for simultaneous energy efficiency and temperature variation resilience in CMOS circuits. Microelectron. J. 38(4-5): 583-594 (2007) - [j11]Zhiyu Liu, Volkan Kursun
:
PMOS-Only Sleep Switch Dual-Threshold Voltage Domino Logic in Sub-65-nm CMOS Technologies. IEEE Trans. Very Large Scale Integr. Syst. 15(12): 1311-1319 (2007) - [c33]Sherif A. Tawfik, Volkan Kursun
:
Low Power and Stable FinFET SRAM with Static Independent Gate Bias for Enhanced Integration Density. ICECS 2007: 443-446 - [c32]Sherif A. Tawfik, Volkan Kursun
:
Buffer Insertion and Sizing in Clock Distribution Networks with Gradual Transition Time Relaxation for Reduced Power Consumption. ICECS 2007: 845-848 - [c31]Zhiyu Liu, Volkan Kursun
:
New MTCMOS Flip-Flops with Simple Control Circuitry and Low Leakage Data Retention Capability. ICECS 2007: 1276-1279 - [c30]Ranjith Kumar, Volkan Kursun
:
Temperature-Adaptive Energy Reduction for Ultra-Low Power-Supply-Voltage Subthreshold Logic Circuits. ICECS 2007: 1280-1283 - [c29]Sherif A. Tawfik, Volkan Kursun
:
Low-Power Low-Voltage Hot-Spot Tolerant Clocking with Suppressed Skew. ISCAS 2007: 645-648 - [c28]Zhiyu Liu, Volkan Kursun
:
Charge Recycling MTCMOS for Low Energy Active/Sleep Mode Transitions. ISCAS 2007: 1389-1392 - [c27]Sherif A. Tawfik, Volkan Kursun
:
Multi-Vth Level Conversion Circuits for Multi-VDD Systems. ISCAS 2007: 1397-1400 - [c26]Zhiyu Liu, Volkan Kursun
:
High Read Stability and Low Leakage Cache Memory Cell. ISCAS 2007: 2774-2777 - [c25]Volkan Kursun
, Sherif A. Tawfik, Zhiyu Liu:
Leakage-Aware Design of Nanometer SoC. ISCAS 2007: 3231-3234 - [c24]Sherif A. Tawfik, Volkan Kursun
:
Dual signal frequencies and voltage levels for low power and temperature-gradient tolerant clock distribution. ISLPED 2007: 62-67 - [c23]Sherif A. Tawfik, Volkan Kursun
:
Dual-V_DD Clock Distribution for Low Power and Minimum Temperature Fluctuations Induced Skew. ISQED 2007: 73-78 - [c22]Zhiyu Liu, Volkan Kursun
:
Charge Recycling Between Virtual Power and Ground Lines for Low Energy MTCMOS. ISQED 2007: 239-244 - [c21]Zhiyu Liu, Sherif A. Tawfik, Volkan Kursun
:
An independent-gate FinFET SRAM cell for high data stability and enhanced integration density. SoCC 2007: 63-66 - [c20]Sherif A. Tawfik, Volkan Kursun
:
Low-power high-performance FinFET sequential circuits. SoCC 2007: 145-148 - 2006
- [j10]Zhiyu Liu, Volkan Kursun
:
Sleep switch dual threshold voltage domino logic with reduced subthreshold and gate oxide leakage current. Microelectron. J. 37(8): 812-820 (2006) - [j9]Zhiyu Liu, Volkan Kursun
:
Leakage Power Characteristics of Dynamic Circuits in Nanometer CMOS Technologies. IEEE Trans. Circuits Syst. II Express Briefs 53-II(8): 692-696 (2006) - [j8]Ranjith Kumar, Volkan Kursun
:
Reversed Temperature-Dependent Propagation Delay Characteristics in Nanometer CMOS Circuits. IEEE Trans. Circuits Syst. II Express Briefs 53-II(10): 1078-1082 (2006) - [j7]Zhiyu Liu, Volkan Kursun
:
Leakage Biased pMOS Sleep Switch Dynamic Circuits. IEEE Trans. Circuits Syst. II Express Briefs 53-II(10): 1093-1097 (2006) - [c19]Ranjith Kumar, Volkan Kursun
:
A design methodology for temperature variation insensitive low power circuits. ACM Great Lakes Symposium on VLSI 2006: 410-415 - [c18]Zhiyu Liu, Volkan Kursun
:
Leakage current starved domino logic. ACM Great Lakes Symposium on VLSI 2006: 428-433 - [c17]Ranjith Kumar, Volkan Kursun:
Impact of temperature fluctuations on circuit characteristics in 180nm and 65nm CMOS technologies. ISCAS 2006 - [c16]Volkan Kursun, Zhiyu Liu:
Wide temperature spectrum low leakage dynamic circuit technique for sub-65nm CMOS technologies. ISCAS 2006 - [c15]Zhiyu Liu, Volkan Kursun
:
Robust Dynamic Node Low Voltage Swing Domino Logic with Multiple Threshold Voltages. ISQED 2006: 31-36 - [c14]Zhiyu Liu, Volkan Kursun
:
Leakage Biased Sleep Switch Domino Logic. ISQED 2006: 318-323 - [c13]Zhiyu Liu, Volkan Kursun
:
High Speed Low Swing Dynamic Circuits with Multiple Supply and Threshold Voltages. ISVLSI 2006: 59-64 - [c12]Ranjith Kumar, Volkan Kursun
:
Supply and Threshold Voltage Optimization for Temperature Variation Insensitive Circuit Performance: A Comparison. SoCC 2006: 89-90 - [c11]Zhiyu Liu, Volkan Kursun
:
High Read Stability and Low Leakage SRAM Cell Based on Data/Bitline Decoupling. SoCC 2006: 115-116 - 2005
- [j6]Volkan Kursun
, Vivek De, Eby G. Friedman, Siva G. Narendra:
Monolithic voltage conversion in low-voltage CMOS technologies. Microelectron. J. 36(9): 863-867 (2005) - [c10]Volkan Kursun
, Gerhard Schrom, Vivek De, Eby G. Friedman, Siva G. Narendra:
Cascode buffer for monolithic voltage conversion operating at high input supply voltages. ISCAS (1) 2005: 464-467 - [c9]Zhiyu Liu, Volkan Kursun
:
Shifted Leakage Power Characteristics of Dynamic Circuits Due to Gate Oxide Tunneling. SoCC 2005: 151-154 - 2004
- [j5]Volkan Kursun
, Siva G. Narendra, Vivek K. De, Eby G. Friedman:
Low-voltage-swing monolithic dc-dc conversion. IEEE Trans. Circuits Syst. II Express Briefs 51-II(5): 241-248 (2004) - [j4]Volkan Kursun
, Eby G. Friedman:
Sleep switch dual threshold Voltage domino logic with reduced standby leakage current. IEEE Trans. Very Large Scale Integr. Syst. 12(5): 485-496 (2004) - [c8]Volkan Kursun, Eby G. Friedman:
Energy efficient dual threshold voltage dynamic circuits employing sleep switches to minimize subthreshold leakage. ISCAS (2) 2004: 417-420 - [c7]Volkan Kursun, Eby G. Friedman:
Forward body biased keeper for enhanced noise immunity in domino logic circuits. ISCAS (2) 2004: 917-920 - [c6]Gerhard Schrom, Peter Hazucha, Jae-Hong Hahn, Volkan Kursun
, Donald S. Gardner, Siva G. Narendra, Tanay Karnik, Vivek De:
Feasibility of monolithic and 3D-stacked DC-DC converters for microprocessors in 90nm technology generation. ISLPED 2004: 263-268 - [c5]Volkan Kursun
, Eby G. Friedman:
Node Voltage Dependent Subthreshold Leakage Current Characteristics of Dynamic Circuits. ISQED 2004: 104-109 - [c4]Volkan Kursun
, Siva G. Narendra, Vivek De, Eby G. Friedman:
High Input Voltage Step-Down DC-DC Converters for Integration in a Low Voltage CMOS Process. ISQED 2004: 517-521 - 2003
- [j3]David H. Albonesi, Rajeev Balasubramonian, Steve Dropsho, Sandhya Dwarkadas
, Eby G. Friedman, Michael C. Huang
, Volkan Kursun
, Grigorios Magklis, Michael L. Scott
, Greg Semeraro, Pradip Bose, Alper Buyuktosunoglu, Peter W. Cook, Stanley Schuster:
Dynamically Tuning Processor Resources with Adaptive Processing. Computer 36(12): 49-58 (2003) - [j2]Volkan Kursun
, Siva G. Narendra, Vivek De, Eby G. Friedman:
Analysis of buck converters for on-chip integration with a dual supply voltage microprocessor. IEEE Trans. Very Large Scale Integr. Syst. 11(3): 514-522 (2003) - [j1]Volkan Kursun
, Eby G. Friedman:
Domino logic with variable threshold voltage keeper. IEEE Trans. Very Large Scale Integr. Syst. 11(6): 1080-1093 (2003) - [c3]Volkan Kursun
, Siva G. Narendra, Vivek De, Eby G. Friedman:
Monolithic DC-DC Converter Analysis And Mosfet Gate Voltage Optimization. ISQED 2003: 279- - 2002
- [c2]Volkan Kursun
, Eby G. Friedman:
Low swing dual threshold voltage domino logic. ACM Great Lakes Symposium on VLSI 2002: 47-52 - [c1]Steve Dropsho, Volkan Kursun
, David H. Albonesi, Sandhya Dwarkadas
, Eby G. Friedman:
Managing static leakage energy in microprocessor functional units. MICRO 2002: 321-332
Coauthor Index
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