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Microelectronics Reliability, Volume 50
Volume 50, Number 1, January 2010
- C. D. Breach, F. Wulff:
A brief review of selected aspects of the materials science of ball bonding. 1-20
- Hee-Dong Kim, Ho-Myoung An, Yujeong Seo, Yongjie Zhang, Jongsun Park
, Tae Geun Kim:
Hydrogen passivation effects under negative bias temperature instability stress in metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon capacitors for flash memories. 21-25 - Guido Notermans, Theo Smedes, Zeljko Mrcarica, Peter C. de Jong, Ralph Stephan, Hans van Zwol, Dejan M. Maksimovic:
ESD protection for thin gate oxides in 65 nm. 26-31 - J. Vobecký, V. Záhlava, V. Komarnitskyy:
Doping compensation for increased robustness of fast recovery silicon diodes. 32-38 - Ilbilge Dökme
, Semsettin Altindal, Tuncay Tunç, Ibrahim Uslu:
Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes. 39-44 - Jie Liu, Jicheng Zhou, Hongwei Luo, Xuedong Kong, Yunfei En, Qian Shi, Yujuan He:
Total-dose-induced edge effect in SOI NMOS transistors with different layouts. 45-47 - Hui-Wen Tsai, Ming-Dou Ker:
Design of 2xVDD-tolerant mixed-voltage I/O buffer against gate-oxide reliability and hot-carrier degradation. 48-56 - F. Alagi:
DMOS FET parameter drift kinetics from microscopic modeling. 57-62 - Bo-Ching He, Chun-Hu Cheng, Hua-Chiang Wen, Yi-Shao Lai, Ping-Feng Yang, Meng-Hung Lin, Wen-Fa Wu, Chang-Pin Chou:
Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate. 63-69 - Yang-Hua Chang, Rong-Hao Syu:
Simulation of electrical characteristics of InP double-heterojunction bipolar transistors with InGaAsSb base. 70-74 - Sébastien Gallois-Garreignot, Vincent Fiori, D. Nelias:
Fracture phenomena induced by Front-End/Back-End interactions: Dedicated failure analysis and numerical developments. 75-85 - Robin Alastair Amy, Guglielmo S. Aglietti
, Guy Richardson:
Accuracy of simplified printed circuit board finite element models. 86-97 - C. Y. Khor
, M. Abdul Mujeebu
, Mohd Zulkifly Abdullah, F. Che Ani:
Finite volume based CFD simulation of pressurized flip-chip underfill encapsulation process. 98-105 - De-Shin Liu, Zhen-Wei Zhuang
, Ching-Yang Chen, Cho-Liang Chung:
Modeling of multi-layered structure containing heterogeneous material layer with randomly distributed particles using infinite element method. 106-115 - Dominik Herkommer, Jeff M. Punch
, Michael Reid:
A reliability model for SAC solder covering isothermal mechanical cycling and thermal cycling conditions. 116-126 - Mei-Ling Wu
:
Design of experiments to investigate reliability for solder joints PBGA package under high cycle fatigue. 127-139 - Mei-Ling Wu
, Donald Barker:
Rapid assessment of BGA life under vibration and bending, and influence of input parameter uncertainties. 140-148 - Syed Zafar Shazli, Mehdi Baradaran Tahoori:
Using Boolean satisfiability for computing soft error rates in early design stages. 149-159
Volume 50, Number 2, February 2010
- Sachin Kumar, Eli Dolev, Michael G. Pecht
:
Parameter selection for health monitoring of electronic products. 161-168 - Giacomo Langfelder
:
Design of a fully CMOS compatible 3-µm size color pixel. 169-173 - Yang-Hua Chang, Kun-Ying Yang:
Extraction of bias-dependent parasitic source/drain resistance in MOSFETs with an advanced mobility model. 174-178 - Zhongfa Ma, Peng Zhang, Yong Wu, Weihua Li, Yiqi Zhuang, Lei Du:
A percolation study of RTS noise amplitudes in nano-MOSFETs by Monte Carlo simulation. 179-182 - Martin Sauter, Joost A. Willemen:
Simulation and modelling of VDMOSFET self protection under TLP-stress. 183-189 - Despina C. Moschou
, Giannis P. Kontogiannopoulos, Dimitrios N. Kouvatsos, Apostolos T. Voutsas:
On the importance of the Vg, max-Vth parameter on LTPS TFT stressing behavior. 190-194 - Eun-Kyung Kim:
Assessment of ultra-thin Si wafer thickness in 3D wafer stacking. 195-198 - Samrat L. Sabat
, Siba K. Udgata
, K. P. N. Murthy:
Small signal parameter extraction of MESFET using quantum particle swarm optimization. 199-206 - Yu. N. Novikov, A. V. Vishnyakov, V. A. Gritsenko, K. A. Nasyrov, Hei Wong
:
Modeling the charge transport mechanism in amorphous Al2O3 with multiphonon trap ionization effect. 207-210 - A. A. Dakhel
:
Effect of ytterbium doping on the optical and electrical properties of intrinsic In2O3 thin films. 211-216 - Johanna Virkki, Tomi Seppälä, Laura Frisk, Pekka Heino:
Accelerated testing for failures of tantalum capacitors. 217-219 - Toshihide Takahashi, Shuichi Komatsu, Hiroshi Nishikawa
, Tadashi Takemoto:
Thin film joining for high-temperature performance of power semi-conductor devices. 220-227 - J. de Vries, W. Balemans, W. D. van Driel:
Predictive modeling of board level shock-impact reliability of the HVQFN-family. 228-234 - Olivér Krammer, Bálint Sinkovics:
Improved method for determining the shear strength of chip component solder joints. 235-241 - Seunghyun Cho, Tae-Eun Chang, Joseph Y. Lee, Hyung-Pil Park, Youngbae Ko, GyunMyoung Park:
New dummy design and stiffener on warpage reduction in Ball Grid Array Printed Circuit Board. 242-250 - Lijuan Liu, Wei Zhou, Hongbo Zhang, Baoling Li, Ping Wu:
Electromigration behavior in Cu/Sn-8Zn-3Bi/Cu solder joint. 251-257 - Hyomi Kim, Jongmin Kim, Jooheon Kim:
Effects of novel carboxylic acid-based reductants on the wetting characteristics of anisotropic conductive adhesive with low melting point alloy filler. 258-265 - Chiao-Tzu Huang
, Kuen-Suan Chen
, Tsang-Chuan Chang
:
An application of DMADV methodology for increasing the yield rate of surveillance cameras. 266-272 - Hongge Li, Wei Zhao, Youguang Zhang:
Micropower fully integrated CMOS readout interface for neural recording application. 273-281 - N. P. Futane, Shubhajit Roy Chowdhury, C. Roy Chowdhury, Hiranmay Saha:
ANN based CMOS ASIC design for improved temperature-drift compensation of piezoresistive micro-machined high resolution pressure sensor. 282-291 - Mile K. Stojcev, Igor Z. Milovanovic, Emina I. Milovanovic, Tatjana R. Nikolic:
Address generators for linear systolic array. 292-303 - Oana Boncalo, Alexandru Amaricai, Mihai Udrescu, Mircea Vladutiu:
Quantum circuit's reliability assessment with VHDL-based simulated fault injection. 304-311
- Adelmo Ortiz-Conde
, Francisco J. García-Sánchez
, Juin J. Liou, Ching-Sung Ho:
Integration-based approach to evaluate the sub-threshold slope of MOSFETs. 312-315
Volume 50, Number 3, March 2010
- Michael G. Pecht
, Rubyca Jaai:
A prognostics and health management roadmap for information and electronics-rich systems. 317-323
- Tongdan Jin, Haitao Liao, Madhu Kilari:
Reliability growth modeling for in-service electronic systems considering latent failure modes. 324-331
- Yusuke Kobayashi, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao
, Kazuo Tsutsui, Hiroshi Iwai:
Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness. 332-337 - Saeed Mohammadi
, Ali Afzali-Kusha:
Modeling of drain current, capacitance and transconductance in thin film undoped symmetric DG MOSFETs including quantum effects. 338-345 - W. S. Lau, Peizhen Yang, Eng Hua Lim, Yee Ling Tang, Seow Wei Lai, V. L. Lo, S. Y. Siah, L. Chan:
Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors. 346-350 - S. Karatas, Abdulmecit Türüt:
The frequency-dependent electrical characteristics of interfaces in the Sn/p-Si metal semiconductor structures. 351-355 - Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii
, Takeo Hattori, Hiroshi Iwai:
SrO capping effect for La2O3/Ce-silicate gate dielectrics. 356-359 - Brahim Benbakhti, J. S. Ayubi-Moak, Karol Kalna
, D. Lin, Geert Hellings, Guy Brammertz
, Kristin De Meyer, Iain Thayne, Asen Asenov:
Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. 360-364 - Xiang Liu, Jiann-Shiun Yuan, Juin J. Liou:
Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance. 365-369 - Yang-Hua Chang, Jian-Wen Chen:
Extraction of VBIC model parameters for InGaAsSb DHBTs. 370-375 - Feifei He, Cher Ming Tan
:
Circuit level interconnect reliability study using 3D circuit model. 376-390 - X. Dong, P. Zhu, Zhonghua Li, Jun Sun, J. D. Boyd:
Electromigration-induced stress in a confined bamboo interconnect with randomly distributed grain sizes. 391-397 - Yeong K. Kim, In Soo Park, Jooho Choi:
Warpage mechanism analyses of strip panel type PBGA chip packaging. 398-406 - Taho Yang
, Yuan-Ting Cheng:
The use of Mahalanobis-Taguchi System to improve flip-chip bumping height inspection efficiency. 407-414 - Seyyed Javad Seyyed Mahdavi
, Karim Mohammadi:
Reliability enhancement of digital combinational circuits based on evolutionary approach. 415-423 - Anirban Sengupta, Reza Sedaghat, Zhipeng Zeng:
A high level synthesis design flow with a novel approach for efficient design space exploration in case of multi-parametric optimization objective. 424-437 - Injoong Kim:
Reliability Object Model Tree (ROM-Tree): A system design-for-reliability method. 438-446
- B. Bouabdallah, Y. Bourezig, B. Benichou:
Improved resolution method to study at 3D the conduction phenomena inside GaAs PIN photodiode. 447-453
Volume 50, Number 4, April 2010
- Massimo Vanzi:
Editorial. 455 - David Veyrié, Olivier Gilard, Kevin Sanchez, Sébastien Lhuillier, Frédéric Bourcier:
New methodology for the assessment of the thermal resistance of laser diodes and light emitting diodes. 456-461 - Daniel T. Cassidy, Chadwick K. Hall, Othman Rehioui, Laurent Béchou:
Strain estimation in III-V materials by analysis of the degree of polarization of luminescence. 462-466 - Matteo Meneghini
, Nicola Trivellin
, Kenji Orita, Masaaki Yuri, Tsuyoshi Tanaka, Daisuke Ueda, Enrico Zanoni
, Gaudenzio Meneghesso
:
Reliability evaluation for Blu-Ray laser diodes. 467-470 - Giovanna Mura
, Massimo Vanzi:
The interpretation of the DC characteristics of LED and laser diodes to address their failure analysis. 471-478
- Tong Yan Tee, Xuejun Fan
, Yi-Shao Lai:
Advances in Wafer Level Packaging (WLP). 479-480 - Cheng-Ta Ko, Kuan-Neng Chen
:
Wafer-level bonding/stacking technology for 3D integration. 481-488 - Li-Cheng Shen, Chien-Wei Chien, Hsien-Chie Cheng, Chia-Te Lin:
Development of three-dimensional chip stacking technology using a clamped through-silicon via interconnection. 489-497 - Theresa Sze, Darko Popovic, Jing Shi, Yi-Shao Lai, James G. Mitchell, Bruce Guenin, Tsung-Yueh Tsai, Chin-Li Kao, Matthew Giere:
Early experience with in situ chip-to-chip alignment characterization of Proximity Communication flip-chip package. 498-506 - Changsoo Jang, Byeng Dong Youn
, Ping F. Wang, Bongtae Han
, Suk-Jin Ham:
Forward-stepwise regression analysis for fine leak batch testing of wafer-level hermetic MEMS packages. 507-513 - Yong Liu:
Trends of power semiconductor wafer level packaging. 514-521 - Jiunn Chen
, Yi-Shao Lai, Chueh-An Hsieh, Chia Yi Hu:
Redistribution in wafer level chip size packaging technology for high power device applications: Process and design considerations. 522-527 - Hendrik Pieter Hochstenbach, Willem D. van Driel, Dao-Guo Yang, Jeroen J. M. Zaal, E. Bagerman:
Designing for reliability using a new Wafer Level Package structure. 528-535 - X. J. Fan, B. Varia, Q. Han:
Design and optimization of thermo-mechanical reliability in wafer level packaging. 536-546 - Pridhvi Dandu, Xuejun Fan
, Y. Liu, C. Diao:
Finite element modeling on electromigration of solder joints in wafer level packages. 547-555 - Hao-Yuan Chang, Wen-Fung Pan, Meng-Kai Shih
, Yi-Shao Lai:
Geometric design for ultra-long needle probe card for digital light processing wafer testing. 556-563 - Y. A. Su, Long Bin Tan
, T. Y. Tee, Vincent B. C. Tan:
Rate-dependent properties of Sn-Ag-Cu based lead-free solder joints for WLCSP. 564-576 - Paul Crosbie, Yeong J. Lee:
Multiple impact characterization of wafer level packaging (WLP). 577-582
Volume 50, Number 5, May 2010
- Juin J. Liou, Chao-Sung Lai
:
Editorial. 583
- Tzu-I Tsai, Horng-Chih Lin, Min-Feng Jian, Tiao-Yuan Huang, Tien-Sheng Chao:
A simple method for sub-100 nm pattern generation with I-line double-patterning technique. 584-588 - Sheng-Lyang Jang, Chia-Wei Chang, Yi-Jhe Song, Cheng-Chen Liu, Chun-Wei Hsu:
On the injection methods in a top-series-injection-locked frequency divider. 589-593 - Sheng-Lyang Jang, Cheng-Chen Liu, Ren-Kai Yang, Chih-Chieh Shih, Chia-Wei Chang, Hsiu-An Yeh:
A 0.35 µm CMOS divide-by-2 quadrature injection-locked frequency divider based on voltage-current feedback topology. 594-598 - Chuan-Hsi Liu, H. W. Chen:
Electrical characteristics and reliability properties of metal-oxide-semiconductor capacitors with HfZrLaO gate dielectrics. 599-602 - Bing-Yue Tsui, Pei-Yu Wang, Ting-Yeh Chen, Jung-Chien Cheng:
Multi-gate non-volatile memories with nanowires as charge storage material. 603-606 - H. J. Hung, James B. Kuo, D. Chen, Chih-Sheng Yeh:
Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect. 607-609 - Bo-Chin Wang, Ting-Kuo Kang, San-Lein Wu, Shoou-Jinn Chang:
Tensile CESL-induced strain dependence on impact ionization efficiency in nMOSFETs. 610-613 - H. W. Chen, Chuan-Hsi Liu:
Impact of Hf content on positive bias temperature instability reliability of HfSiON gate dielectrics. 614-617 - Chia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Chun-Yu Chen, Yen-Ting Chiang, Feng-Renn Juang, Chien-Ting Lin, Chieh-Ming Lai:
Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing. 618-621 - Wing-Shan Tam, Oi-Ying Wong, Tsz-Ching Ng, Chi-Wah Kok, Hei Wong
:
Analysis of ESD discharge current distribution and area optimization of VDMOS gate protection structure. 622-626 - Oi-Ying Wong, Wing-Shan Tam, Jun Liu, Oi-Kan Shea, Shiu Hung Cheung, Chi-Wah Kok, Hei Wong
:
Modeling of high-frequency characteristics for epoxy-sealed micro vacuum capacitors. 627-630 - Hsien-Chin Chiu
, Chao-Hung Chen, Chih-Wei Yang, Jeffrey S. Fu, Cheng-Shun Wang:
Electrical and reliability characteristics of GaAs MOSHEMTs utilizing high-k IIIB and IVB oxide layers. 631-634
- Chih-Hong Hwang, Yiming Li, Ming-Hung Han:
Statistical variability in FinFET devices with intrinsic parameter fluctuations. 635-638 - Jer-Chyi Wang
, Pai-Chi Chou, Chao-Sung Lai
, Wen-Hui Lee, Chi-Fong Ai:
Characteristics optimization of N2O annealing on tungsten nanocrystal with W/Si dual-sputtered method for nonvolatile memory application. 639-642 - Sk. Ziaur Rahaman
, Siddheswar Maikap
:
Low power resistive switching memory using Cu metallic filament in Ge0.2Se0.8 solid-electrolyte. 643-646 - Kuo-Fu Lee, Yiming Li, Tien-Yeh Li, Zhong-Cheng Su, Chin-Hong Hwang:
Device and circuit level suppression techniques for random-dopant-induced static noise margin fluctuation in 16-nm-gate SRAM cell. 647-651 - Jagan Singh Meena, Min-Ching Chu, Jitendra N. Tiwari, Hsin-Chiang You, Chung-Hsin Wu, Fu-Hsiang Ko:
Flexible metal-insulator-metal capacitor using plasma enhanced binary hafnium-zirconium-oxide as gate dielectric layer. 652-656 - Ming-Hung Han, Yiming Li, Chih-Hong Hwang:
The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit. 657-661 - Po-Chin Huang, San Lein Wu, Shoou Jinn Chang, Yao Tsung Huang, Chien Ting Lin, Mike Ma, Osbert Cheng:
Electrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method. 662-665 - Tseng-Chin Lee, Bing-Yue Tsui, Pei-Jer Tzeng, Ching-Chiun Wang, Ming-Jinn Tsai:
A process for high yield and high performance carbon nanotube field effect transistors. 666-669 - Kou-Chen Liu, Wen-Hsien Tzeng, Kow-Ming Chang, Yi-Chun Chan, Chun-Chih Kuo, Chun-Wen Cheng:
The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device. 670-673 - Samit Kumar Ray, Rajkumar Singha, Samaresh Das
, Santanu Manna
, Achintya Dhar
:
Ge based nanostructures for electronic and photonic devices. 674-678
- Ray-Ming Lin
, Yung-Hsiang Lin, Chung-Hao Chiang, Mu-Jen Lai, Yi-Lun Chou, Yuan-Chieh Lu, Shou-Yi Kuo, Bor-Ren Fang, Meng-Chyi Wu:
Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs. 679-682 - Cheng-Chen Lin, Liann-Be Chang
, Ming-Jer Jeng
, Chia-Yi Yen, Atanu Das, Chung-Yi Tang, Ming-Yi Tsai, Mu-Jen Lai:
Fabrication and thermal analysis of flip-chip light-emitting diodes with different numbers of Au stub bumps. 683-687 - Hung-Pin D. Yang, Zao-En Yeh, Gray Lin
, Hao-Chung Kuo, Jim Y. Chi:
InGaAs submonolayer quantum-dot photonic-crystal LEDs for fiber-optic communications. 688-691 - Pin-Hsiang Chiu, Chien-Jung Huang, Cheng-Fu Yang, Teen-Hang Meen, Yeong-Her Wang:
Red polymer light-emitting devices based on dye-dispersed poly (9, 9-dioctylfluorene-alt-benzothiadiazole). 692-695 - Peng Yu Chen, Herng Yih Ueng, Meiso Yokoyama:
High efficiency p-i-n organic light-emitting diodes with a novel n-doping layer. 696-698 - Hui-Wen Cheng, Yiming Li:
Optimization on configuration of surface conduction electron-emitters. 699-703 - Chun-Yu Wu, Ta-Chuan Liao, Ming-H Yu, Sheng-Kai Chen, Chung-Min Tsai, Huang-Chung Cheng:
Field enhancement of omega-shaped-gated poly-Si TFT SONOS memory fabricated by a simple sidewall spacer formation. 704-708 - Chyuan Haur Kao
, T. C. Chan, Kung Shao Chen, Yu-Teng Chung, Wen-Shih Luo:
Physical and electrical characteristics of the high-k Nd2O3 polyoxide deposited on polycrystalline silicon. 709-712 - Meng Zhang, Mingxiang Wang:
An investigation of drain pulse induced hot carrier degradation in n-type low temperature polycrystalline silicon thin film transistors. 713-716 - Henry J. H. Chen, Ming-Tien Huang, Y. B. Liu:
Fabrication of Au/PEDOT stacked electrodes for organic thin film transistors by imprinting technology. 717-721 - Hung-Pin D. Yang, Chih-Tsung Shih, Su-Mei Yang, Tsin-Dong Lee:
High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200 nm range. 722-725 - Cheng-Ling Lee, Kuo-Hsiang Lin, Nan-Kuang Chen:
Analysis of optical properties of fundamental-mode in waveguide tapered fibers. 726-729 - Shou-Yi Kuo, Kou-Chen Liu, Fang-I Lai, Jui-Fu Yang, Wei-Chun Chen, Ming-Yang Hsieh, Hsin-I Lin, Woei-Tyng Lin:
Effects of RF power on the structural, optical and electrical properties of Al-doped zinc oxide films. 730-733
- Tsung-Han Tsai, Huey-Ing Chen, Kun-Wei Lin
, Tai-You Chen, Chien-Chang Huang, Kai-Siang Hsu, Wen-Chau Liu:
A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT). 734-737 - Cheng-En Lue, Jer-Chyi Wang
, Dorota G. Pijanowska
, Chia-Ming Yang
, I-Shun Wang, Huang-Chia Lee, Chao-Sung Lai
:
Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity. 738-741 - Tseng-Fu Lu, Jer-Chyi Wang
, Chia-Ming Yang
, Chung-Po Chang, Kuan-I Ho, Chi-Fong Ai, Chao-Sung Lai
:
Non-ideal effects improvement of SF6 plasma treated hafnium oxide film based on electrolyte-insulator-semiconductor structure for pH-sensor application. 742-746 - Siddheswar Maikap
, Amit Prakash, W. Banerjee, Anirban Das
, Chao-Sung Lai
:
Characteristics of pH sensors fabricated by using protein-mediated CdSe/ZnS quantum dots. 747-752 - Jung-Chuan Chou, Hung-Yu Yang, Cheng-Wei Chen:
Glucose biosensor of ruthenium-doped TiO2 sensing electrode by co-sputtering system. 753-756
Volume 50, Number 6, June 2010
- Peter Ersland, Roberto Menozzi
:
Editorial. 757 - Sefa Demirtas, Jungwoo Joh, Jesús A. del Alamo:
High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate. 758-762 - Reza Pazirandeh, Joachim Würfl, Günther Tränkle:
Determination of GaN HEMT reliability by monitoring IDSS. 763-766 - Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo:
A model for the critical voltage for electrical degradation of GaN high electron mobility transistors. 767-773
- R. L. de Orio
, Hajdin Ceric
, Siegfried Selberherr
:
Physically based models of electromigration: From Black's equation to modern TCAD models. 775-789 - Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii
, Takeo Hattori, Hiroshi Iwai:
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics. 790-793 - Elena Atanassova, Nenad Novkovski
, Albena Paskaleva
, D. Spassov:
Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks. 794-800 - Jiann-Shiun Yuan, J. Ma:
Voltage stress effect on class AB power amplifier and mixed-signal sample-hold circuit. 801-806 - Jiann-Shiun Yuan, J. Ma, Wen-Kuan Yeh, Chia-Wei Hsu:
Impact of strain on hot electron reliability of dual-band power amplifier and integrated LNA-mixer RF performances. 807-812 - N. A. Poklonski
, N. I. Gorbachuk
, S. V. Shpakovski, V. A. Filipenia, S. B. Lastovskii, V. A. Skuratov, Andreas D. Wieck
, V. P. Markevich:
Impedance and barrier capacitance of silicon diodes implanted with high-energy Xe ions. 813-820 - Shih-Hung Chen, Ming-Dou Ker:
Investigation on NMOS-based power-rail ESD clamp circuits with gate-driven mechanism in a 0.13-µm CMOS technology. 821-830 - Chun-Yu Lin
, Ming-Dou Ker, Yuan-Wen Hsiao:
Design of differential low-noise amplifier with cross-coupled-SCR ESD protection scheme. 831-838 - Mu-Chun Wang
, Chuan-Hsi Liu, Kuo-Shu Huang, Zhen-Ying Hsieh, Shuang-Yuan Chen, Hsin-Chia Yang, Chii-Ruey Lin:
Promoting of charged-device model/electrostatic discharge immunity in the dicing saw process. 839-846 - Hsien-Chin Chiu
, Chih-Wei Yang, Chao-Hung Chen, Che-Kai Lin, Jeffrey S. Fu, Hsing-Yuan Tu, Shiang-Feng Tang:
High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using palladium-gate technology. 847-850 - Bo-Ching He, Hua-Chiang Wen, Meng-Hung Lin, Yi-Shao Lai, Wen-Fa Wu, Chang-Pin Chou:
Effect of annealing treatment and nanomechanical properties for multilayer Si0.8Ge0.2-Si films. 851-856 - Anindya Ghoshal, William H. Prosser, Heung Soo Kim
, Aditi Chattopadhyay, Ben Copeland:
Development of embedded piezoelectric acoustic sensor array architecture. 857-863 - Ville Pekkanen, Kimmo Kaija, Matti Mäntysalo
, Esa Kunnari, Juha Niittynen, Pauliina Mansikkamäki:
Functional fluid jetting performance optimization. 864-871 - De-Shin Liu, Chi-Min Chang, John Liu, Shu-Ching Ho, Hao-Yin Tsai:
Novel analysis model for investigation of contact force and scrub length for design of probe card. 872-880 - K.-H. Allers:
Intrinsic and extrinsic reliability of a serial connection of capacitors. 881-886 - H. Y. Wang, X. M. Xiong, Jin-Xiu Zhang:
Moisture effect on the dielectric and structure of BaTiO3-based devices. 887-890
Volume 50, Number 7, July 2010
- Artur Wymyslowski:
Guest Editorial: 2009 EuroSimE international conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems. 891-892 - Hai Bo Fan, Matthew M. F. Yuen:
A multi-scale approach for investigation of interfacial delamination in electronic packages. 893-899 - Bernhard Wunderle
, E. Dermitzaki, O. Hölck, Jörg Bauer, Hans Walter, Q. Shaik, K. Rätzke, Franz Faupel
, Bernd Michel, Herbert Reichl:
Molecular dynamics approach to structure-property correlation in epoxy resins for thermo-mechanical lifetime modeling. 900-909 - Jan de Vreugd, Kaspar M. B. Jansen, Leo J. Ernst, C. Bohm:
Prediction of cure induced warpage of micro-electronic products. 910-916 - Sander Noijen, Roy Engelen, Joerg Martens, Alexandru Opran, Olaf van der Sluis
, Richard B. R. van Silfhout:
Prediction of the epoxy moulding compound aging effect on package reliability. 917-922 - Dao-Guo Yang, Martien Kengen, W. G. M. Peels, David Heyes, W. D. van Driel:
Reliability modeling on a MOSFET power package based on embedded die technology. 923-927 - Ahmer Syed, Tong Yan Tee, Hun Shen Ng, Rex Anderson, Choong Peng Khoo, Boyd Rogers:
Advanced analysis on board trace reliability of WLCSP under drop impact. 928-936 - D. Farley, Y. Zhou, F. Askari, M. Al-Bassyiouni, A. Dasgupta, J. F. J. Caers, J. W. C. DeVries:
Copper trace fatigue models for mechanical cycling, vibration and shock/drop of high-density PWAs. 937-947
- Yang-Hua Chang, Shih-Wei Lin, Chia-Hao Chang:
Optimization of high voltage LDMOSFETs with complex multiple-resistivity drift region and field plate. 949-953 - Xiao Zou, Guojia Fang, Longyan Yuan, Xingsheng Tong, Xingzhong Zhao:
Improved electrical characteristics and reliability of amorphous InGaZnO metal-insulator-semiconductor capacitor with high kappa HfOxNy gate dielectric. 954-958 - Shih-Chun Yang, Pang Lin, Chien-Ping Wang, Sheng Bang Huang, Chiu-Ling Chen, Pei-Fang Chiang, An-Tse Lee, Mu-Tao Chu:
Failure and degradation mechanisms of high-power white light emitting diodes. 959-964 - Amrita Chakraborty, Chandan Kumar Sarkar:
Electron transport in two dimensional electron gas formed at the heterojunction of AlxGa(1-x)N/GaN at microwave frequencies. 965-970 - M. Reza Javaheri, Reza Sedaghat:
Strength violation effect on soft-error detection in sub-micron technology. 971-977 - Satyanarayan Iyer, Krishnaswami Srihari:
Assembly reliability assessment and life estimation for a stacked area array device. 978-985 - Yue Ying Ong, Soon Wee Ho, Kripesh Vaidyanathan, Vasarla Nagendra Sekhar, Ming Chinq Jong, Samuel Lim Yak Long, Vincent Lee Wen Sheng, Leong Ching Wai, Vempati Srinivasa Rao, Jimmy Ong, Xuefen Ong, Xiaowu Zhang
, Yoon Uk Seung, John H. Lau, Yeow Kheng Lim
, David Yeo, Kai Chong Chan, Yanfeng Zhang, Juan Boon Tan, Dong Kyun Sohn:
Design, assembly and reliability of large die and fine-pitch Cu/low-k flip chip package. 986-994 - Wen-Bin Young:
Modeling of a non-Newtonian flow between parallel plates in a flip chip encapsulation. 995-999 - Tung T. Nguyen, Donggun Lee, Jae B. Kwak, Seungbae Park:
Effect of glue on reliability of flip chip BGA packages under thermal cycling. 1000-1006 - Cédric Le Coq, Adellah Tougui, Marie-Pascale Stempin, Laurent Barreau:
Experimental study of WL-CSP reliability subjected to a four-point bend-test. 1007-1013 - Hu Guojun, Roberto Rossi, Jing-en Luan, Xavier Baraton:
Interface delamination analysis of TQFP package during solder reflow. 1014-1020 - Bo Zhang, Pinkuan Liu
, Han Ding, Wenwu Cao
:
Modeling of board-level package by Finite Element Analysis and laser interferometer measurements. 1021-1027 - Da Yu, Jae B. Kwak, Seungbae Park, John Lee:
Dynamic responses of PCB under product-level free drop impact. 1028-1038
Volume 50, Number 8, August 2010
- John Keane, Tony Tae-Hyoung Kim, Xiaofei Wang, Chris H. Kim:
On-chip reliability monitors for measuring circuit degradation. 1039-1053
- Wing-Shan Tam, Oi-Ying Wong, Chi-Wah Kok, Hei Wong
:
Generating sub-1V reference voltages from a resistorless CMOS bandgap reference circuit by using a piecewise curvature temperature compensation technique. 1054-1061 - Lining Zhang
, Jian Zhang, Yan Song, Xinnan Lin, Jin He, Mansun Chan
:
Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect. 1062-1070 - Hong Wu, Qinsong Qian, Siyang Liu, Weifeng Sun, Longxing Shi:
Devices' optimization against hot-carrier degradation in high voltage pLEDMOS transistor. 1071-1076 - Chenyue Ma, Hao Wang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang:
Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device. 1077-1080 - Jing-Ping Xu, X. Xiao, Pui-To Lai:
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode. 1081-1086 - Hongxia Liu, Baojun Tang, Yue Hao:
Characteristics analysis and optimization design of a new ESD power clamp circuit. 1087-1093 - Jian Wang, Wenhua Wang, Ru Huang, Yunpeng Pei, Shoubin Xue, Xin'an Wang, Chunhui Fan, Yangyuan Wang:
Deteriorated radiation effects impact on the characteristics of MOS transistors with multi-finger configuration. 1094-1097 - Min-Ching Chu, Jagan Singh Meena, Chih-Chia Cheng, Hsin-Chiang You, Feng-Chih Chang, Fu-Hsiang Ko:
Plasma-enhanced flexible metal-insulator-metal capacitor using high-k ZrO2 film as gate dielectric with improved reliability. 1098-1102 - Etienne Herth
, Bernard Legrand, Lionel Buchaillot
, Nathalie Rolland, Tuami Lasri:
Optimization of SiNX: H films deposited by PECVD for reliability of electronic, microsystems and optical applications. 1103-1106 - Yeu-Jent Hu, Chia-Hui Fang, Jen-Cheng Wang, Hung-Lun Lo, Tzer-En Nee
:
Exciton wavefunction coupled surface plasmon resonance for In-rich InGaN film with perforated aluminum cylindrical micropillar arrays. 1107-1110 - Yu-Ming Chang, Hua-Chiang Wen, Chu-Shou Yang, Derming Lian, Chien-Huang Tsai, Jyh-Shyang Wang, Wen-Fa Wu, Chang-Pin Chou:
Evaluating the abrasive wear of Zn1-xMnxO heteroepitaxial layers using a nanoscratch technique. 1111-1115 - Chinguo Kuo, Jen-Jun Chen:
Development of a novel stack package to fabricate high density memory modules for high-end application. 1116-1120 - Johanna Virkki, Sampo Tuukkanen
:
Testing the effects of temperature cycling on tantalum capacitors. 1121-1124 - Jussi Hokka, Toni T. Mattila, Jue Li, Jarmo Teeri, Jorma K. Kivilahti:
A novel impact test system for more efficient reliability testing. 1125-1133 - Mansur Ahmed
, Tama Fouzder, Ahmed Sharif
, Asit Kumar Gain, Y. C. Chan:
Influence of Ag micro-particle additions on the microstructure, hardness and tensile properties of Sn-9Zn binary eutectic solder alloy. 1134-1141 - Chen Wei, Yong Chang Liu, Li Ming Yu, Hao Chen
, Xun Wang:
Effects of Al on the failure mechanism of the Sn-Ag-Zn eutectic solder. 1142-1145 - Cheng-Fu Yu, Chi-Ming Chan, Ker-Chang Hsieh:
The effect of tin grain structure on whisker growth. 1146-1151 - Kati Kokko, Anniina Parviainen, Laura Frisk:
Corrosion protection of anisotropically conductive adhesive joined flip chips. 1152-1158 - H. W. Tseng, C. T. Lu, Y. H. Hsiao, P. L. Liao, Y. C. Chuang, T. Y. Chung, Cheng-Yi Liu:
Electromigration-induced failures at Cu/Sn/Cu flip-chip joint interfaces. 1159-1162 - Li-Na Ji, Yi Gong, Zhen-Guo Yang:
Failure investigation on copper-plated blind vias in PCB. 1163-1170 - Alireza Rohani, Hamid R. Zarandi:
Two effective methods to mitigate soft error effects in SRAM-based FPGAs. 1171-1180 - Surendra S. Rathod
, Ashok K. Saxena, Sudeb Dasgupta:
A proposed DG-FinFET based SRAM cell design with RadHard capabilities. 1181-1188
- Nebojsa D. Jankovic:
Carbon Nanotubes: Science and Applications, M. Meyyappan (Ed.). CRC Press LLC (2005), 289 pp., $103.13, Hardcover, ISBN: 0-8493-2111-5. 1189
Volume 50, Numbers 9-11, September - November 2010
- Giovanni Busatto
, Francesco Iannuzzo
:
Editorial. 1191-1192
- Carlos Algora
:
Reliability of III-V concentrator solar cells. 1193-1198 - James H. Stathis
, M. Wang, K. Zhao:
Reliability of advanced high-k/metal-gate n-FET devices. 1199-1202
- Uwe Scheuermann, Stefan Schuler:
Power cycling results for different control strategies. 1203-1209 - Ramun M. Kho, A. J. Moonen, V. M. Girault, Jaap Bisschop, E. H. T. Olthof, S. Nath, Z. N. Liang:
Determination of the stress level for voltage screen of integrated circuits. 1210-1214 - Josep Torras Flaquer, Jean-Marc Daveau, Lirida A. B. Naviner
, Philippe Roche:
Fast reliability analysis of combinatorial logic circuits using conditional probabilities. 1215-1218 - G. G. dos Santos, Elaine Crespo Marques, Lirida A. B. Naviner
, Jean-François Naviner
:
Using error tolerance of target application for efficient reliability improvement of digital circuits. 1219-1222 - Digeorgia N. da Silva, André Inácio Reis, Renato P. Ribas:
Gate delay variability estimation method for parametric yield improvement in nanometer CMOS technology. 1223-1229 - Marcantonio Catelani
, Lorenzo Ciani
, Valentina Luongo:
The FMEDA approach to improve the safety assessment according to the IEC61508. 1230-1235 - A. Deyine, Kevin Sanchez, Philippe Perdu, F. Battistella, Dean Lewis:
CADless laser assisted methodologies for failure analysis and device reliability. 1236-1240 - Rodrigo Possamai Bastos, Gilles Sicard, Fernanda Lima Kastensmidt
, Marc Renaudin, Ricardo Reis
:
Asynchronous circuits as alternative for mitigation of long-duration transient faults in deep-submicron technologies. 1241-1246 - Elaine Crespo Marques, Lirida A. B. Naviner
, Jean-François Naviner
:
An efficient tool for reliability improvement based on TMR. 1247-1250
- Luca Larcher
, Andrea Padovani
:
High-kappa related reliability issues in advanced non-volatile memories. 1251-1258 - L. Gerrer, M. Rafik, G. Ribes, Gérard Ghibaudo, E. Vincent:
Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation. 1259-1262 - Javier Martín-Martínez, Esteve Amat
, M. B. González
, P. Verheyen, Rosana Rodríguez, Montserrat Nafría
, Xavier Aymerich
, Eddy Simoen:
SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors. 1263-1266 - Stanislav Tyaginov, Ivan A. Starkov
, Oliver Triebl, Johann Cervenka, C. Jungemann, Sara Carniello
, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser:
Interface traps density-of-states as a vital component for hot-carrier degradation modeling. 1267-1272 - Rosario Rao
, Fernanda Irrera:
Threshold voltage instability in high-k based flash memories. 1273-1277 - Ninoslav Stojadinovic, Danijel Dankovic
, Ivica Manic, Aneta Prijic
, Vojkan Davidovic
, Snezana Djoric-Veljkovic
, Snezana Golubovic, Zoran Prijic:
Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress. 1278-1282 - Sharifah Wan Muhamad Hatta, Norhayati Soin, D. Abd Hadi, Jianfu Zhang
:
NBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations. 1283-1289 - Jin-Young Kim, Jun-Seok Oh, Won-Ju Cho, Jong Tae Park:
NBTI and hot carrier effect of Schottky-barrier p-MOSFETs. 1290-1293 - Enrique Miranda
, Eamon O'Connor, Paul K. Hurley
:
Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics. 1294-1297 - Paulo F. Butzen
, Vinícius Dal Bem, André Inácio Reis, Renato P. Ribas:
Transistor network restructuring against NBTI degradation. 1298-1303 - Binhong Li, Alexandre Boyer, Sonia Bendhia, Christophe Lemoine:
Ageing effect on electromagnetic susceptibility of a phase locked loop. 1304-1308 - J. Y. Seo, J. E. Seok, W. S. Kim, N. H. Cha, J. S. Kang, B. S. So:
PMOSFET anti-fuse using GIDL-induced-HEIP mechanism. 1309-1311 - Mario Lanza, Marc Porti
, Montserrat Nafría
, Xavier Aymerich
, E. Whittaker, B. Hamilton:
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. 1312-1315 - Dong Wook Kim, Woo Sang Park, Jong Tae Park:
The optimum fin width in p-MuGFETs with the consideration of NBTI and hot carrier degradation. 1316-1319
- M. Bellotti, R. Mariani:
How future automotive functional safety requirements will impact microprocessors design. 1320-1326 - Feifei He, Cher Ming Tan
:
Modeling the effect of barrier thickness and low-k dielectric on circuit reliability using 3D model. 1327-1331 - C. M. Fu, Cher Ming Tan
, S. H. Wu, H. B. Yao:
Width dependence of the effectiveness of reservoir length in improving electromigration for Cu/Low-k interconnects. 1332-1335 - Yung Chuen Tan
, Cher Ming Tan
, Xiaowu Zhang
, Tai Chong Chai, D. Q. Yu:
Electromigration performance of Through Silicon Via (TSV) - A modeling approach. 1336-1340 - Muhammad Bashir, Linda S. Milor
, Dae Hyun Kim, Sung Kyu Lim
:
Methodology to determine the impact of linewidth variation on chip scale copper/low-k backend dielectric breakdown. 1341-1346 - A. Podgaynaya, Ralf Rudolf, B. Elattari, Dionyz Pogany, Erich Gornik
, Matthias Stecher, Marc Strasser:
Single pulse energy capability and failure modes of n- and p-channel LDMOS with thick copper metallization. 1347-1351 - Yung Chuen Tan
, Cher Ming Tan
, T. C. Ng:
Addressing the challenges in solder resistance measurement for electromigration test. 1352-1354 - J. R. Lloyd, N. A. Connelly, Xiaoli He, K. J. Ryan, B. H. Wood:
Fast diffusers in a thermal gradient (solder ball). 1355-1358
- Harald Gossner
, Werner Simbürger, Matthias Stecher:
System ESD robustness by co-design of on-chip and on-board protection measures. 1359-1366 - Tommaso Cilento, M. Schenkel, C. Yun, R. Mishra, Junjun Li, Kiran V. Chatty, Robert Gauthier:
Simulation of ESD protection devices in an advanced CMOS technology using a TCAD workbench based on an ESD calibration methodology. 1367-1372 - Augusto Tazzoli, Martina Cordoni, Paolo Colombo, C. Bergonzoni, Gaudenzio Meneghesso
:
Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65 nm technology platform. 1373-1378 - J. Bourgeat, Christophe Entringer, Philippe Galy, Marise Bafleur, D. Marin-Cudraz:
Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm. 1379-1382 - Sandeep Sangameswaran, Jeroen De Coster, Guido Groeseneken
, Ingrid De Wolf:
Impact of design factors and environment on the ESD sensitivity of MEMS micromirrors. 1383-1387 - Philippe Galy, Sylvain Dudit, Michel Vallet, Ph. Larre, M. Bilinski, E. Petit, J. Beltritti, A. Dray, Jean Jimenez, Frank Jezequel, R. Chevallier, C. Boutonnat, V. Varo:
Inventory of silicon signatures induced by CDM event on deep sub-micronic CMOS-BICMOS technologies. 1388-1392 - Bo Song, Yan Han, Shurong Dong, Fei Ma, Mingliang Li, Meng Miao, Kehan Zhu:
Compact MOS-triggered SCR with faster turn-on speed for ESD protection. 1393-1397
- Anna Cavallini, Laura Polenta, Antonio Castaldini:
Charge carrier recombination and generation analysis in materials and devices by electron and optical beam microscopy. 1398-1406 - Mauro Ciappa, Alexander Koschik, Maurizio Dapor
, Wolfgang Fichtner:
Modeling secondary electron images for linewidth measurement by critical dimension scanning electron microscopy. 1407-1412 - C. Cassidy, J. Teva, Jochen Kraft, Franz Schrank:
Through Silicon Via (TSV) defect investigations using lateral emission microscopy. 1413-1416 - Frank Zachariasse, Gerben Boon, Gaël Faggion, Keith Sarault:
Laser modulation mapping on an unmodified laser scanning microscope. 1417-1421 - Joy Y. Liao, Steven Kasapi, Bruce Cory, Howard L. Marks, Yin S. Ng:
Scan chain failure analysis using laser voltage imaging. 1422-1426 - Sergey Bychikhin, Georg Haberfehlner
, J. Rhayem, Daniel Vanderstraeten, Renaud Gillon
, Dionyz Pogany:
Investigation of smart power DMOS devices under repetitive stress conditions using transient thermal mapping and numerical simulation. 1427-1430 - Philippe Perdu, Jerome Di-Battista, Sylvain Dudit, Tomonori Nakamura:
VLSI functional analysis by dynamic emission microscopy. 1431-1435 - Domenico Mello, R. Ricciari, M. Aiello, M. Astuto:
Case study: Failure analysis for metal corrosion induced by pressure pot test. 1436-1440 - Philipp Scholz, Christian Gallrapp, Uwe Kerst, Ted R. Lundquist, Christian Boit:
Optimizing focused ion beam created solid immersion lenses in bulk silicon using design of experiments. 1441-1445 - J. S. Luo, C. S. Sung, W. S. Hsu, L. Y. Huang, Jeremy D. Russell:
Electron beam induced carbon deposition using hydrocarbon contamination for XTEM analysis. 1446-1450 - Yoji Mashiko, Hiroaki Etoh, Akiyoshi Furukawa, Daisuke Nomiyama, Osamu Ichimaru:
Study of non-contact nano-probing technique using FIB. 1451-1453
- Rudolf Schlangen, Hervé Deslandes, Ted R. Lundquist, C. Schmidt, Frank Altmann
, K. Yu, A. Andreasyan, S. Li:
Dynamic lock-in thermography for operation mode-dependent thermally active fault localization. 1454-1458 - M. Fakhri, A.-K. Geinzer, Ralf Heiderhoff
, L. J. Balk:
Nanoscale thermally induced stress analysis by complementary Scanning Thermal Microscopy techniques. 1459-1463 - Claus Hartmann, M. Wieberneit:
Investigation on BIST assisted failure analysis on digital integrated circuits. 1464-1468 - Sebastian Brand
, P. Czurratis, P. Hoffrogge, Matthias Petzold
:
Automated inspection and classification of flip-chip-contacts using scanning acoustic microscopy. 1469-1473 - Jérémy Postel-Pellerin, Romain Laffont, Gilles Micolau, Frédéric Lalande, Arnaud Régnier, Bernard Bouteille:
Leakage paths identification in NVM using biased data retention. 1474-1478 - Lucio Rossi, Michele Riccio
, Ettore Napoli, Andrea Irace
, Giovanni Breglio
, Paolo Spirito:
A novel UIS test system with Crowbar feedback for reduced failure energy in power devices testing. 1479-1483 - Raman Kapoor
, Enrique Escobedo-Cousin
, S. H. Olsen, Steve J. Bull:
Characterising gate dielectrics in high mobility devices using novel nanoscale techniques. 1484-1487 - Jae-Seong Jeong, Young Jeon Kim:
Failure mechanism of COF based Line Driver IC for Flat Panel Display by contamination. 1488-1493 - Markus Grützner, Christian Burmer, Christof Brillert:
Ultra-fast CAD scan chain highlighting for failure analysis assistance. 1494-1498 - Guillaume Celi, Sylvain Dudit, Philippe Perdu, Antoine Reverdy, Thierry Parrassin, Emmanuel Bechet, Dean Lewis, Michel Vallet:
Facing the defect characterization and localization challenges of bridge defects on a submicronic technology (45 nm and below). 1499-1505 - Zoubir Khatir, Laurent Dupont
, Ali Ibrahim
:
Investigations on junction temperature estimation based on junction voltage measurements. 1506-1510 - Roland Biberger, Guenther Benstetter
, Holger Goebel
, Alexander Hofer
:
Intermittent-contact capacitance spectroscopy - A new method for determining C(V) curves with sub-micron lateral resolution. 1511-1513
- David J. Smith
, David A. Cullen
, Lin Zhou
, Martha R. McCartney:
Applications of TEM imaging, analysis and electron holography to III-nitride HEMT devices. 1514-1519 - Mustapha Faqir, Mohsine Bouya
, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi
, Fausto Fantini
:
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. 1520-1522 - Valerio Di Lecce, Michele Esposto, Matteo Bonaiuti, Gaudenzio Meneghesso
, Enrico Zanoni
, Fausto Fantini
, Alessandro Chini
:
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress. 1523-1527 - Hemant Rao, Gijs Bosman:
Device reliability study of AlGaN/GaN high electron mobility transistors under high gate and channel electric fields via low frequency noise spectroscopy. 1528-1531 - M. Bouarroudj-Berkani, D. Othman, Stéphane Lefebvre, S. Moumen, Zoubir Khatir, T. Ben Sallah:
Ageing of SiC JFET transistors under repetitive current limitation conditions. 1532-1537 - Matteo Meneghini
, Diego Barbisan, Y. Bilenko, Maxim S. Shatalov, J. Yang, R. Gaska, Gaudenzio Meneghesso
, Enrico Zanoni
:
Defect-related degradation of Deep-UV-LEDs. 1538-1542 - Benoit Lambert, G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, Hervé Blanck, C. Moreau:
Reliability of high voltage/high power L/S-band Hbt technology. 1543-1547 - G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, Cristell Maneux
, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Jean Godin:
Preliminary results of storage accelerated aging test on InP/InGaAs DHBT. 1548-1553 - Sudip Ghosh
, François Marc, Cristell Maneux
, Brice Grandchamp, G. A. Koné, Thomas Zimmer:
Thermal aging model of InP/InGaAs/InP DHBT. 1554-1558 - Manuel Vázquez
, Neftalí Núñez
, Eduardo Nogueira, A. Borreguero:
Degradation of AlInGaP red LEDs under drive current and temperature accelerated life tests. 1559-1562 - Heinz-Christoph Neitzert
:
ESD sensitivity of AlGaAs and InGaAsP based Fabry-Perot laser diodes. 1563-1567 - Raphael Baillot, Yannick Deshayes, Laurent Béchou, T. Buffeteau, I. Pianet, C. Armand, F. Voillot, S. Sorieul, Yves Ousten:
Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses. 1568-1573 - Olivier Latry
, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane
, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi:
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications. 1574-1576 - Grazia Sasso, Maurizio Costagliola, Niccolò Rinaldi
:
Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs. 1577-1580 - F. Vitobello, A. R. Barnes:
Preliminary, space focused, reliability tests on European GaN HEMTs. 1581-1586 - Christian Moreau, M. Le Pipec, S. Tence, J. Hemery, J. Rigo, C. Guérin, D. Ruelloux, C. Schneider, P. Le Helleye:
A complete methodology for assessing GaN behaviour for military applications. 1587-1592
- Roberto Gaddi, Robertus Petrus Van Kampen, Anartz Unamuno, Vikram Joshi, D. Lacey, Mickael Renault, Charles Smith, Richard Knipe, Dennis Yost:
MEMS technology integrated in the CMOS back end. 1593-1598 - Jacopo Iannacci
, A. Repchankova, Alessandro Faes, Augusto Tazzoli, Gaudenzio Meneghesso
, Gian-Franco Dalla Betta
:
Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism. 1599-1603 - Augusto Tazzoli, Marco Barbato
, F. Mattiuzzo, V. Ritrovato, Gaudenzio Meneghesso
:
Study of the actuation speed, bounces occurrences, and contact reliability of ohmic RF-MEMS switches. 1604-1608 - A. Koszewski, F. Souchon, Ch. Dieppedale, Thierry Ouisse
:
Modeling of dielectric charging in electrostatic MEMS switches. 1609-1614 - Usama Zaghloul, Matroni Koutsoureli, H. Wang, Fabio Coccetti, George J. Papaioannou
, Patrick Pons
, Robert Plana
:
Assessment of dielectric charging in electrostatically driven MEMS devices: A comparison of available characterization techniques. 1615-1620 - Yuji Sasaki, Mauro Ciappa, Takayuki Masunaga, Wolfgang Fichtner:
Accurate extraction of the mechanical properties of thin films by nanoindentation for the design of reliable MEMS. 1621-1625 - K. Wada, Yuji Yagi, I. Nakagawa, T. Atsumi, Nobutada Ohno
:
Analysis of thermal expansion in elastic and elastoplastic layers subjected to cyclic thermal loading. 1626-1630 - L. Sauter, A. Seekamp, Y. Shibata, Y. Kanameda, H. Yamashita:
Whisker mitigation measures for Sn-plated Cu for different stress tests. 1631-1635 - Y. Yang, Riet Labie, F. Ling, C. Zhao, A. Radisic, Jan Van Olmen, Youssef Travaly, Bert Verlinden, Ingrid De Wolf:
Processing assessment and adhesion evaluation of copper through-silicon vias (TSVs) for three-dimensional stacked-integrated circuit (3D-SIC) architectures. 1636-1640 - Bernhard Czerny
, Golta Khatibi, Brigitte Weiss, T. Licht:
A fast test technique for life time estimation of ultrasonically welded Cu-Cu interconnects. 1641-1644 - Changwoon Han, Chulmin Oh
, Nochang Park, Wonsik Hong:
Creep lifetime prediction of solder joint for heat sink assembly. 1645-1649 - Johanna Virkki, Tomi Seppälä, Pasi Raumonen
:
Testing the effects of reflow on tantalum capacitors. 1650-1653 - Xiaosong Ma, Kaspar M. B. Jansen, G. Q. Zhang, Willem D. van Driel, Olaf van der Sluis
, Leo J. Ernst, C. Regards, Christian Gautier, Hélène Frémont:
A fast moisture sensitivity level qualification method. 1654-1660 - B. Dompierre, W. C. Maia Filho, M. Brizoux, Véronique Aubin
, Eric Charkaluk
:
Thermal ageing induces drastic changes on mechanical and damage behavior of Sn3.0Ag0.5Cu alloy. 1661-1665 - Javad Zarbakhsh, Balamurugan Karunamurthy, Carlos O. Trejo-Caballero, Endre Barti, Thomas Detzel:
Microscopic stress simulation of non-planar chip technologies. 1666-1671 - Paolo Emilio Bagnoli, Yabin Zhang
:
Electro-thermal simulation of metal interconnections under high current flow. 1672-1677 - R. L. J. M. Ubachs:
Electromigration in WLCSP solder bumps. 1678-1683 - Michael Goroll, Reinhard Pufall:
New aspects in characterization of adhesion of moulding compounds on different surfaces by using a simple button-shear-test method for lifetime prediction of power devices. 1684-1687 - A. Aubert, J. P. Rebrasse, Lionel Dantas de Morais, Nathalie Labat, Hélène Frémont:
Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing. 1688-1691 - Mohamed Matmat, K. Koukos, Fabio Coccetti, T. Idda, Antoine Marty, Christophe Escriba, Jean-Yves Fourniols, Daniel Estève:
Life expectancy and characterization of capacitive RF MEMS switches. 1692-1696 - C. Keller, S. Tus:
Investigation of open bond wires in MEMS devices. 1697-1699 - Fulvio Infante, Philippe Perdu, Dean Lewis:
Magnetic microscopy for ground plane current detection: a fast and reliable technique for current leakage localization by means of magnetic simulations. 1700-1705 - E. Kamara, Hua Lu, Chris Bailey
, Chris Hunt, Davide Di Maio, Owen Thomas:
A multi-disciplinary study of vibration based reliability of lead-free electronic interconnects. 1706-1710 - Johanna Virkki, A. Koskenkorva, Laura Frisk:
Development of a matrix test board for capacitor reliability testing. 1711-1714
- Reinhold Bayerer:
Advanced packaging yields higher performance and reliability in power electronics. 1715-1719 - Fulvio Bertoluzza, Paolo Cova
, Nicola Delmonte, Pietro Pampili
, Marco Portesine:
Coupled measurement-simulation procedure for very high power fast recovery - Soft behavior diode design and testing. 1720-1724 - Michele Riccio
, Lucio Rossi, Andrea Irace
, Ettore Napoli, Giovanni Breglio
, Paolo Spirito, Ryuzo Tagami, Yoshihito Mizuno:
Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography. 1725-1730 - Carmine Abbate, Giovanni Busatto
, Francesco Iannuzzo
:
IGBT RBSOA non-destructive testing methods: Analysis and discussion. 1731-1737 - Fabio Carastro, Alberto Castellazzi
, Jon C. Clare
, Patrick Wheeler
:
Control technique for power device electro-thermal stress minimisation in non-linear load variable-frequency resonant power converters. 1738-1743 - Pascal Lecuyer, Hélène Frémont, Jean-Pierre Landesman, Manoubi Auguste Bahi:
Wearout estimation using the Robustness Validation methodology for components in 150 degreeC ambient automotive applications. 1744-1749 - Vezio Malandruccolo, Mauro Ciappa, Hubert Rothleitner, M. Hommel, Wolfgang Fichtner:
A new built-in screening methodology for Successive Approximation Register Analog to Digital Converters. 1750-1757 - R. Charavel, Jaume Roig, S. Mouhoubi, P. Gassot, Filip Bauwens, Piet Vanmeerbeek, B. Desoete, Peter Moens, Eddy De Backer:
Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices. 1758-1762 - Mohamed Ali Belaïd
, K. Daoud:
Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors. 1763-1767 - Donatien Martineau
, Thomas Mazeaud, Marc Legros, Philippe Dupuy, Colette Levade:
Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue. 1768-1772 - Cesare Ronsisvalle, Vincenzo Enea:
Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD). 1773-1777 - Mirko Bernardoni, Nicola Delmonte, Paolo Cova
, Roberto Menozzi
:
Thermal modeling of planar transformer for switching power converters. 1778-1782 - Hamid Gualous, Roland Gallay
, G. Alcicek, Boubekeur Tala-Ighil, Amrane Oukaour, Bertrand Boudart, Ph. Makany:
Supercapacitor ageing at constant temperature and constant voltage and thermal shock. 1783-1788 - Antonio Testa
, Salvatore De Caro
, Saverio Panarello, Salvatore Patanè
, Sebastiano Russo, D. Patti, S. Poma, Romeo Letor:
Reliability of planar, Super-Junction and trench low voltage power MOSFETs. 1789-1795 - Olivier Briat
, Jean-Michel Vinassa, Nicolas Bertrand, H. El Brouji, Jean-Yves Delétage, Eric Woirgard:
Contribution of calendar ageing modes in the performances degradation of supercapacitors during power cycling. 1796-1803 - Laurent Dupont
, J. L. Blanchard, Richard Lallemand, Gerard Coquery, Jean-Michel Morelle, G. Blondel, B. Rouleau:
Experimental and numerical results correlation during extreme use of power MOSFET designed for avalanche functional mode. 1804-1809 - M. Tounsi, Amrane Oukaour, Boubekeur Tala-Ighil, Hamid Gualous, Bertrand Boudart, Djamil Aïssani
:
Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature. 1810-1814 - Yassine Belmehdi, Stephane Azzopardi, Jean-Yves Delétage
, Eric Woirgard:
Experimental electro-mechanical static characterization of IGBT bare die under controlled temperature. 1815-1821
- Jean-Luc Autran, Daniela Munteanu
, Philippe Roche, Gilles Gasiot, S. Martinie, S. Uznanski, S. Sauze, S. Semikh, Evgeny Yakushev
, S. Rozov, Pia Loaiza
, G. Warot, M. Zampaolo:
Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level. 1822-1831 - Marta Bagatin, Simone Gerardin
, Alessandro Paccagnella
, Giorgio Cellere, F. Irom, D. N. Nguyen:
Destructive events in NAND Flash memories irradiated with heavy ions. 1832-1836 - Simone Gerardin
, Marta Bagatin, Alessandro Paccagnella
, G. Cellere, Angelo Visconti, Mauro Bonanomi:
Impact of total dose on heavy-ion upsets in floating gate arrays. 1837-1841 - Giovanni Busatto
, Giuseppe Currò, Francesco Iannuzzo
, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. 1842-1847 - Loukas Michalas
, George J. Papaioannou
, Apostolos T. Voutsas:
Degradation of polycrystalline silicon TFTs due to alpha particles irradiation stress. 1848-1851 - Joaquín Alvarado
, El Hafed Boufouss, Valeria Kilchytska
, Denis Flandre
:
Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs. 1852-1856 - Sebania Libertino
, Domenico Corso, G. Murè, A. Marino, Felix Palumbo, Fabio Principato
, G. Cannella, T. Schillaci, S. Giarusso, F. Celi, Michael Lisiansky, Yakov Roizin, Salvatore Lombardo:
Radiation effects in nitride read-only memories. 1857-1860
- Gianluca Generali
, Raffaella Capelli
, Stefano Toffanin
, Antonio Facchetti, Michele Muccini
:
Ambipolar field-effect transistor based on alpha, omega-dihexylquaterthiophene and alpha, omega-diperfluoroquaterthiophene vertical heterojunction. 1861-1865 - Andrea Cester
, Daniele Bari, J. Framarin, Nicola Wrachien, Gaudenzio Meneghesso
, S. Xia, V. Adamovich, J. J. Brown:
Thermal and electrical stress effects of electrical and optical characteristics of Alq3/NPD OLED. 1866-1870 - Cher Ming Tan
, Boon Khai Eric Chen, Kok Peng Toh:
Humidity study of a-Si PV cell. 1871-1874 - P. Espinet, Carlos Algora
, José Ramón González, Neftalí Núñez
, Manuel Vázquez
:
Degradation mechanism analysis in temperature stress tests on III-V ultra-high concentrator solar cells using a 3D distributed model. 1875-1879 - Neftalí Núñez
, Manuel Vázquez
, José Ramón González, Carlos Algora
, P. Espinet:
Novel accelerated testing method for III-V concentrator solar cells. 1880-1883 - Xavier Boddaert, B. Bensaid, Patrick Benaben, Romain Gwoziecki, Romain Coppard:
Mechanical and thermal reliability of printed organic thin-film transistor. 1884-1887 - Hicham Youssef, André Ferrand, Pierre-François Calmon, Patrick Pons, Robert Plana
:
Methods to improve reliability of bulge test technique to extract mechanical properties of thin films. 1888-1893 - Sara Padovani, A. Del Negro, M. Antonipieri, S. Sinesi, Roberta Campesato, Mariacristina Casale, Giuseppe Gabetta, Gabriele Gori:
Triple junction InGaP/InGaAs/Ge solar cells for high concentration photovoltaics application: Degradation tests of solar receivers. 1894-1898 - Mahyar Boostandoost, Uwe Kerst, Christian Boit:
Extraction of local thin-film solar cell parameters by bias-dependent IR-LBIC. 1899-1902 - Laura Lancellotti
, Raffaele Fucci, Antonio Romano, Angelo Sarno, Santolo Daliento:
Induced degradation on c-Si solar cells for concentration terrestrial applications. 1903-1906
Volume 50, Number 12, December 2010
- Piyas Samanta, Chunxiang Zhu, Mansun Chan
:
Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks. 1907-1914 - Mingzhi Dai, Kinleong Yap:
Observation and mechanism explanation of the parasitic charge pumping current. 1915-1919 - Masamichi Suzuki, Masato Koyama, Atsuhiro Kinoshita:
Detailed investigation of the effects of La and Al content on the electrical characteristics and reliability properties of La-Al-O gate dielectrics. 1920-1923 - P. S. Das, Abhijit Biswas:
Charge trapping and reliability characteristics of ultra-thin HfYOx films on n-GaAs substrates. 1924-1930 - Kow-Ming Chang, Wen-Hsien Tzeng, Kou-Chen Liu, Yi-Chun Chan, Chun-Chih Kuo:
Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film. 1931-1934 - Qinsong Qian, Weifeng Sun, Jing Zhu, Longxing Shi:
Investigation of the shift of hot spot in lateral diffused LDMOS under ESD conditions. 1935-1941 - Hongxia Liu, Bin Li, Jin Li, Bo Yuan:
A comparative study of self-heating effect of nMOSFETs fabricated on SGOI and SGSOAN substrates. 1942-1950 - Chun-Jen Weng:
Feasible approach for processes integration of CMOS transistor gate/side-wall spacer patterning fabrication. 1951-1960 - A. Alaeddine, M. Kadi, K. Daoud, B. Beydoun:
Characteristics degradation of the SiGe HBT under electromagnetic field stress. 1961-1966 - Brian P. Downey, Suzanne E. Mohney, Trevor E. Clark, Joseph R. Flemish:
Reliability of aluminum-bearing ohmic contacts to SiC under high current density. 1967-1972 - Srikanth Ravipati, Chang-Jung Kuo, Jiann Shieh
, Cheng-Tung Chou, Fu-Hsiang Ko:
Fabrication and enhanced field emission properties of novel silicon nanostructures. 1973-1976 - G. S. Wood, I. Gual, P. Parmiter, Rebecca Cheung
:
Temperature stability of electro-thermally and piezoelectrically actuated silicon carbide MEMS resonators. 1977-1983 - Maw-Shung Lee, Sean Wu, Shih-Bin Jhong, Kuan-Ting Liu
, Ruyen Ro, Chia-Chi Shih, Zhi-Xun Lin, Kang-I Chen, Shou-Chang Cheng:
Influence of substrate temperature to prepare (1 0 3) oriented AlN films. 1984-1987 - Youngrae Kim, Sung-Keun Kang, Sarah Eunkyung Kim:
Study of thinned Si wafer warpage in 3D stacked wafers. 1988-1993 - Juha Karppinen, Jue Li, Toni T. Mattila, Mervi Paulasto-Kröckel:
Thermomechanical reliability characterization of a handheld product in accelerated tests and use environment. 1994-2000 - Sari Merilampi, Toni Björninen
, Veikko Haukka, Pekka Ruuskanen
, Leena Ukkonen, Lauri Sydänheimo
:
Analysis of electrically conductive silver ink on stretchable substrates under tensile load. 2001-2011 - Kuen-Suan Chen
, C. C. Wang, Chin-Hsin Wang, Cheng-Fu Huang
:
Application of RPN analysis to parameter optimization of passive components. 2012-2019 - Yaowu Shi, Yanfu Yan, Jianping Liu, Zhidong Xia, Yongping Lei, Fu Guo, Xiaoyan Li:
Constitutive modeling on creep deformation for a SnPb-based composite solder reinforced with microsized Cu particles. 2020-2025 - Krishna Tunga, Suresh K. Sitaraman:
Laser moiré interferometry for fatigue life prediction of lead-free solders. 2026-2036 - Tz-Cheng Chiu, Jyun-Ji Lin, Hung-Chun Yang, Vikas Gupta:
Reliability model for bridging failure of Pb-free ball grid array solder joints under compressive load. 2037-2050 - Tama Fouzder, Asit Kumar Gain, Y. C. Chan, Ahmed Sharif
, Winco K. C. Yung
:
Effect of nano Al2O3 additions on the microstructure, hardness and shear strength of eutectic Sn-9Zn solder on Au/Ni metallized Cu pads. 2051-2058 - Yu-Lin Shen, K. Aluru:
Numerical study of ductile failure morphology in solder joints under fast loading conditions. 2059-2070 - Liang Zhang, Songbai Xue, Li-li Gao, Zhong Sheng, Sheng-lin Yu, Yan Chen, Wei Dai, Feng Ji, Zeng Guang:
Reliability study of Sn-Ag-Cu-Ce soldered joints in quad flat packages. 2071-2077 - Seok Hwan Lee, Jaeyong Sung, Sarah Eunkyung Kim:
Dynamic flow measurements of capillary underfill through a bump array in flip chip package. 2078-2083 - Jose Maria Garcia del Pozo
, Santiago Celma, Aránzazu Otín
, I. Lope, J. Urdangarín:
1.8 V-3 GHz CMOS limiting amplifier with efficient frequency compensation. 2084-2089
- Ya. I. Alivov, Qian Fan, Xianfeng Ni, Sergey A. Chevtchenko, I. B. Bhat, Hadis Morkoç:
n-Al0.15Ga0.85 N/p-6H-SiC heterostructure and based bipolar transistor. 2090-2092 - Jeffrey S. Fu, Dong-Hua Yang, Chin-I Yeh, Nemai C. Karmakar
, Jui-Ching Cheng, Kuo-Sheng Chin, Hsien-Chin Chiu, Jian Kang Xiao:
Electromechanical controlled phased array dumbbell EBG beam steerer. 2093-2097
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